MXLSMCJ78AE3 Circuit Protection |
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| Allicdata Part #: | 1086-12202-ND |
| Manufacturer Part#: |
MXLSMCJ78AE3 |
| Price: | $ 7.43 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 78V 126V DO214AB |
| More Detail: | N/A |
| DataSheet: | MXLSMCJ78AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 6.76229 |
| Voltage - Clamping (Max) @ Ipp: | 126V |
| Supplier Device Package: | DO-214AB (SMCJ) |
| Package / Case: | DO-214AB, SMC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 11.4A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 86.7V |
| Voltage - Reverse Standoff (Typ): | 78V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes (MXLSMCJ78AE3)
TVS (Transient Voltage Suppression) Diodes provide protection for sensitive components and systems against transient surges. They use a heavily depleted BJT (bipolar junction transistor) structure that works to quickly reduce voltage and current. The major part of TVS Diodes is a zinc oxide kernel filled with a semi-conductor material like silicon or polycrystalline silicon. These diodes are more popular than other overvoltage protection devices because of their low power consumption, small size, fast response time, and cost effectiveness.
The MXLSMCJ78AE3 is a highly advanced extra low-leakage bidirectional transient voltage suppression diode that provides an ideal solution for transient voltage suppression needs. It features an extended breakdown voltage range and a low leakage current. The MXLSMCJ78AE3 offers excellent transient surge and ESD (electrostatic discharge) protection solutions. The device has a wide operating temperature range and is designed for reliable operation in both dynamic and static applications.
Application Field of the MXLSMCJ78AE3
The MXLSMCJ78AE3 is designed to provide extra low-leakage transient voltage suppression and ESD protection for automotive, industrial, consumer, computer, and communication systems. The device is suitable for use as a protection element for sensitive ICs and replacers of multilayer gas discharge devices in automotive electronic control circuits such as airbags, ABS, and transmission control systems. The MXLSMCJ78AE3 is also ideal for protecting sensitive medical equipment and consumer electronics from dangerous voltage spikes.
Working Principle of the MXLSMCJ78AE3
The working principle of the MXLSMCJ78AE3 is based on the sensitive and fast response of the heavily depleted structure which is filled with a semi-conductor material. The built-in diodes quickly reduce the surge voltage by channeling the current through the reverse-biased junction thereby providing protection from high energy surges. The diode also features two integrated Zener diodes with a breakdown voltage between 6.2V and 6.4V and low leakage current which prevents over-dissipation and maximizes protection.
The extremely low leakage current is maintained by the complex flicker noise compensation circuit that improves the device\'s performance in high energy surge events. Furthermore, the low power consumption of the MXLSMCJ78AE3 makes it a perfect choice for energy-sensitive applications such as portable devices. The device provides excellent ESD protection for a wide range of applications, while its low capacitance, resistance, and switching time enables it to be used in high-speed circuits.
Conclusion
The MXLSMCJ78AE3 has a wide range of applications in automotive, industrial, and consumer systems where a fast and reliable voltage surge protection is necessary. The device features an extended breakdown voltage range and low leakage current, enabling it to provide the highest protection level for sensitive electronics. The improved flicker noise compensation circuit allows the MXLSMCJ78AE3 to respond quickly to voltage surges while maintaining extremely low power consumption. Therefore, the MXLSMCJ78AE3 is a great choice for a variety of overvoltage protection applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MXLSMCJ130AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 130V 209V DO214... |
| MXLSMCJ43AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 43V 69.4V DO214... |
| MXLSMBG85AE3 | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 85V 137V DO215A... |
| MXLSMCJ120CAE3 | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 120V 193V DO214... |
| MXLSMCJ51CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MXLSMLJ5.0CA | Microsemi Co... | 9.79 $ | 1000 | TVS DIODE 5V 9.2V DO214AB |
| MXLSMLG150CA | Microsemi Co... | 10.03 $ | 1000 | TVS DIODE 150V 243V DO215... |
| MXLSMBG64CA | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 64V 103V DO215A... |
| MXLSMCG40AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
| MXLSMCG43AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCJ160CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MXLSMCJ7.5CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMCG6.5CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MXLSMCJLCE15A/TR | Microsemi Co... | 9.04 $ | 1000 | HI REL TVS |
| MXLSMLJ6.0AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
| MXLSMCJLCE16A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 16V 26V DO214AB |
| MXLSMLJ15CAE3/TR | Microsemi Co... | 9.47 $ | 1000 | HI REL TVS |
| MXLSMCGLCE90A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MXLSMLG20CA/TR | Microsemi Co... | 9.7 $ | 1000 | HI REL TVS |
| MXLSMCJ45AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MXLSMBG12A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBG24A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MXLSMLG43AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCGLCE60A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MXLSMBG130A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMCJ130CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 130V 209V DO214... |
| MXLSMCG33CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
| MXLSMBJ100A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MXLSMBJ51A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MXLSMBG7.0CAE3 | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MXLSMCG58AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
| MXLSMCG64AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 64V 103V DO215A... |
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MXLSMCJ78AE3 Datasheet/PDF