MXLSMLJ58CAE3 Circuit Protection |
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| Allicdata Part #: | 1086-12622-ND |
| Manufacturer Part#: |
MXLSMLJ58CAE3 |
| Price: | $ 9.79 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 58V 93.6V DO214AB |
| More Detail: | N/A |
| DataSheet: | MXLSMLJ58CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 8.89462 |
| Voltage - Clamping (Max) @ Ipp: | 93.6V |
| Supplier Device Package: | DO-214AB |
| Package / Case: | DO-214AB, SMC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 3000W (3kW) |
| Current - Peak Pulse (10/1000µs): | 32A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 64.4V |
| Voltage - Reverse Standoff (Typ): | 58V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS (Transient Voltage Suppression) Diodes are a type of semiconductor that is designed to reduce the amount of voltage seen by electronic systems. The MXLSMLJ58CAE3 is a particular model in the TVS family and is primarily used in applications that experience surge voltages. It is designed to protect circuits and components from voltage levels that exceed their maximum listed specifications, providing an additional layer of protection against voltage spikes or transient voltage events.
The MXLSMLJ58CAE3 utilizes the principle of a voltage-dependent breakdown of the pn junction, which is the basis of all semiconductor diodes. This breakdown of the pn junction occurs when the voltage level rises to a certain threshold, beyond which it will cause an exponential increase in current. The MXLSMLJ58CAE3 is designed such that when specific voltage levels are reached, the diode will turn on and conduct current to mitigate the voltage surge. When this occurs, the device will then clamp the voltage level to a predetermined threshold.
This particular device is designed to be primarily applied in AC-centric applications, such as in telecommunications equipment. The device comes in a single SMD package, with a lead spacing of 0.5mm and an insulation layer of 0.15mm. It is also designed with an integrated bypass diode, which allows the device to be used in bidirectional transient protection applications. The device also has good ESD protection, which helps to guard against electro-static and electric discharge damage.
The working principle of the MXLSMLJ58CAE3 is based on a process known as avalanche breakdown. This is a phenomenon wherein the application of a strong electric field causes the depletion layer along the pn junction of the diode to surge in width, resulting in current conduction and an exponential increase in current across the junction. This, in turn, will cause the voltage to drop, clamping it to the desired voltage level. This clamping of the voltage is then used to protect downstream components from any voltage overload or spike.
The MXLSMLJ58CAE3 is suitable for use in many types of electronic equipment and systems, such as computers, telecommunications equipment, AC power supplies, as well as automotive systems. It provides an additional layer of protection for the components and circuits within these systems, protecting them from high voltage and transient voltage events. The device is also designed to be easily installed, with no additional components necessary, and can even be used in bidirectional transient voltage applications.
In conclusion, the MXLSMLJ58CAE3 is a TVS Diode designed for use in AC-centric applications. It utilizes the process of avalanche breakdown to reduce transient and surge voltage events from damaging downstream systems and components. It is designed for easy installation and is suitable for use in various types of electronic systems that are prone to voltage damage from fluctuating voltage levels and transient voltage events.
The specific data is subject to PDF, and the above content is for reference
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| MXLSMCJ7.5CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMCG6.5CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
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| MXLSMLJ6.0AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
| MXLSMCJLCE16A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 16V 26V DO214AB |
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| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MXLSMBG12A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBG24A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MXLSMLG43AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
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| MXLSMBG130A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMCJ130CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 130V 209V DO214... |
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MXLSMLJ58CAE3 Datasheet/PDF