MXLSMLJ7.0AE3 Circuit Protection |
|
| Allicdata Part #: | 1086-12640-ND |
| Manufacturer Part#: |
MXLSMLJ7.0AE3 |
| Price: | $ 9.25 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 7V 12V DO214AB |
| More Detail: | N/A |
| DataSheet: | MXLSMLJ7.0AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 8.41162 |
| Voltage - Clamping (Max) @ Ipp: | 12V |
| Supplier Device Package: | DO-214AB |
| Package / Case: | DO-214AB, SMC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 3000W (3kW) |
| Current - Peak Pulse (10/1000µs): | 250A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 7.78V |
| Voltage - Reverse Standoff (Typ): | 7V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS Diodes is a type of technology that is used to protect electronic circuits from transient over-voltages and electrical surge. MXLSMLJ7.0AE3 is a special type of Transient Voltage Suppression (TVS) Diode developed by Fairchild Semiconductor, a leading integrated circuit (IC) manufacturer. This type of diode is designed to provide protection against electrostatic discharge (ESD) and electrical over-stress (EOS) events.
MXLSMLJ7.0AE3 is a bi-directional, Super Junction, TVS diode designed to provide a robust EMI/EMC solution for high current applications. Its key features include a total VBR range of 7 V to 24 V, an EBI immunity of 8 kV, and an IEC Level 4 ESD rating of 15 kV and 25 A. The diode is housed in a SOT553 package, making it suitable for a wide range of applications.
The application field of MXLSMLJ7.0AE3 includes but is not limited to power supplies, automotive systems, personal computers, cell phones, audio/video equipment, industrial installations, and telecommunications systems. It is also suitable for use in applications where high protection voltage, reverse leakage current, or a combination of the two are required. The diode\'s capability to provide both ESD and EOS protection makes it ideal for use in a variety of residential, commercial, and industrial environments.
The working principle of the MXLSMLJ7.0AE3 diode is based on the depletion layer effect. It utilizes a special field effect transistor (FET) technology that allows the diode to detect any surge in voltage and respond by greater conduction current resulting in higher power dissipation. This significantly lowers the voltage, thus providing an effective means of protection against high power, transient electrical surges.
In addition to providing robust surge protection, the MXLSMLJ7.0AE3 diode also offers very low insertion loss, which enables it to provide superior protection with minimal power dissipation. Furthermore, the diode is designed with a soft recovery characteristic, which eliminates any switching transients, hence avoiding any potential damage to other components on the same circuit board. All these factors make the MXLSMLJ7.0AE3 a highly reliable and effective ESD/EOS protection device for a variety of high power applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| MXLSMCG43AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCJ160CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 160V 259V DO214... |
| MXLSMCJ7.5CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
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| MXLSMLJ6.0AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
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| MXLSMLG20CA/TR | Microsemi Co... | 9.7 $ | 1000 | HI REL TVS |
| MXLSMCJ45AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MXLSMBJ15CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MXLSMBJ17CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MXLSMBG12A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBG24A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MXLSMBG30A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MXLSMCG5.0CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 5V 9.2V DO215AB |
| MXLSMCJLCE8.0A/TR | Microsemi Co... | 8.98 $ | 1000 | HI REL TVS |
| MXLSMLJ26AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMLG130AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMLG14A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MXLSMLG43AE3 | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
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| MXLSMCJ130CA | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 130V 209V DO214... |
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| MXLSMBJ100A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MXLSMBJ51A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
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MXLSMLJ7.0AE3 Datasheet/PDF