MXP4KE47CAE3 Circuit Protection

Voltage - Clamping (Max) @ Ipp:	64.8V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	6.2A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	44.7V
Voltage - Reverse Standoff (Typ):	40.2V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Introduction

TVS - diodes are an important component used in electronic apparatus and equipment, especially high-voltage pulsed applications. They are used to provide protection in such applications due to their ability to quickly and reliably absorb overvoltage pulses. TVS diodes, such as the MXP4KE47CAE3, are designed to provide protection against voltage spikes of up to 1500 volts (1.5kV).

Application Field

The main application for MXP4KE47CAE3 is the protection of digital circuits from electrostatic discharges (ESD) and other transients. It is ideal for protecting high-speed signal lines, such as USB ports, and can be used in automotive applications to protect against voltage spikes. MXP4KE47CAE3 can also be used in telecommunications applications, as well as other applications where high-frequency data signals need to be protected.

Working Principle

The MXP4KE47CAE3 TVS diode operates on a simple principle: when a voltage surge or transient occurs, the device quickly becomes reverse biased, clamping the transient voltage and diverting its energy away from the protected circuit. This allows the protected circuit to remain within acceptable levels, preventing damage.To ensure maximum protection against ESD pulses and voltage transients, the MXP4KE47CAE3 utilizes silicon avalanche breakdown technology. In this technology, a voltage surge causes the p-n junction to become heavily reverse biased, resulting in an avalanche breakdown. This breakdown produces a large amount of current, which clamps the transient voltage and dissipates its energy into the transient suppressor, providing protection for the component it is connected to.

Conclusion

In summary, the MXP4KE47CAE3 is a TVS diode designed to provide protection against voltage transients and ESD pulses. It operates on the principle of silicon avalanche breakdown technology, which allows it to quickly and reliably absorb overvoltage pulses. It is an important component used in various high-voltage pulsed applications and is ideal for protecting high-speed signal lines.

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