MXP5KE10CAE3

Voltage - Clamping (Max) @ Ipp:	17V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	500W
Current - Peak Pulse (10/1000µs):	29.4A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	11.1V
Voltage - Reverse Standoff (Typ):	10V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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MXP5KE10CAE3 TVS - Diodes Application Field and Working Principle

TheMX-P5KE10CAE3 TVS - Diodes is an ultra-low capacitance bidirectional bi-directional suppression rectifier designed for ESD protection of high speed data lines such as USB, IEEE 1394, and other interfaces which require low capacitance in order to prevent signal distortion. It consists of two back-to-back zener diodes integrated with a junction field effect transistor (JFET) in a common silicon die.The two zener diodes are used to protect against electrostatic discharge (ESD) events up to 15KV. The JFET is used to reduce the capacitance of the circuit while simultaneously providing an ideal low equivalent on-resistance characteristic. The combination of these two features provides superior ESD protection with minimal signal degradation.The MX-P5KE10CAE3 TVS - Diodes is also suitable for surge protection and can handle peak forward current up to 2A. The low capacitance and high ESD ratings of the MXP5KE10CAE3 make it ideal for applications requiring fast signal recovery times.The working principle of the MXP5KE10CAE3 is based on the zener-diode breakdown principle. When a voltage greater than the zener voltage of the diodes is applied across the diodes, an electric field is induced which causes the zener diodes to break down and conduct current. This current, depending on the zener voltage of the diodes, is then dissipated in the form of heat. The junction field effect transistor (JFET) acts as a low impedance path which serves to reduce parasitic capacitance and provide an ideal low equivalent on resistance characteristics. The combination of the two components creates the ideal ESD protection that is required for high speed data lines. The MXP5KE10CAE3 TVS - Diodes is available in an J-SOT-23-6 package, which is designed for board level mounting and is capable of dissipating up to 150mW of power during an ESD or over-voltage event. Its low capacitance is ideal for high speed signal transmission applications and its low equivalent on-resistance and high ESD ratings make it a reliable and cost effective solution for surge, ESD and over-voltage protection. In conclusion, the MXP5KE10CAE3 is a reliable and cost effective TVS - Diodes that provides superior ESD protection with minimal signal degradation. With its low capacitance, high ESD ratings, and low equivalent on-resistance characteristics, it is the ideal solution for applications requiring fast signal recovery times such as high speed data line protection.

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