MXP5KE8.5AE3

Voltage - Clamping (Max) @ Ipp:	14.4V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	500W
Current - Peak Pulse (10/1000µs):	34.7A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	9.44V
Voltage - Reverse Standoff (Typ):	8.5V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Application field and Working Principle of MXP5KE8.5AE3 TVS - Diodes

MXP5KE8.5AE3 TVS – Diodes are widely used in different applications, including data communication, industrial control, automotive, illumination, medical, aviation, military and consumer electronics. These devices are ultra-low capacitance StableFET MOSFET diodes suitable for automotive applications, especially in reverse body protection and signal line protection.MXP5KE8.5AE3 is a low capacitance MOSFET diode with outstanding performance and protection characteristics. The diode has an ESD rating of up to 8.5kV and provides reverse body protection to enhance reliability and reduce board failures in power switching circuits. The device features common source configurations, low capacitance, good clamping characteristics and excellent ESD performance. It has a low junction capacitance of just 15pF for excellent power decoupling and power rail stability.The working principle of MXP5KE8.5AE3 is relatively simple and straightforward. It utilizes the advantages of StableFET MOSFETs, which employ a variety of patented technologies that enable excellent thermal performance, power handling capabilities, and low capacitance. The device features a PN junction diode in the source to drain path which acts as a low-impedance voltage clamp. When a voltage above the breakdown voltage, or clamp voltage, is applied to the diode, the diode conducts current, and the voltage across the diode is clamped. This allows for protection of the reverse body in the presence of high-voltage transients.Additionally, the device utilizes a number of protection technologies to prevent damage from Electro-Magnetic Interference. The device is equipped with an active circuit clamp that provides protection from high-frequency noise spikes and EMI. It also has a Gate-to-body capacitance that limits the amount of current induced in the IC, protecting it from noise transients.In summary, MXP5KE8.5AE3 is a low capacitance STABLEFET MOSFET diode suitable for automotive applications requiring protection from ESD, EMI and reverse body protection. It has a low junction capacitance of 15pF for power decoupling and it also has a built-in active circuit clamp that provides protection from noise transients. The device is reliable and robust, with excellent thermal characteristics, power handling capabilities, and excellent ESD performance.

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