MXP6KE15AE3 Allicdata Electronics

MXP6KE15AE3 Circuit Protection

Allicdata Part #:

1086-13068-ND

Manufacturer Part#:

MXP6KE15AE3

Price: $ 12.40
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 12.8V 21.2V T-18
More Detail: N/A
DataSheet: MXP6KE15AE3 datasheetMXP6KE15AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.26970
Stock 1000Can Ship Immediately
$ 12.4
Specifications
Voltage - Clamping (Max) @ Ipp: 21.2V
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 28A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 14.3V
Voltage - Reverse Standoff (Typ): 12.8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

TVS (Transient Voltage Suppressor) diodes, also known as surge protectors, are a type of semiconductor that is used to protect other components from electrical transients such as voltage spikes or inductive kickbacks. These devices consist of two or more p-n junctions connected in series. The junctions are usually designed with a wide band gap to provide high breakdown voltage.

MXP6KE15AE3 application field and working principle

The MXP6KE15AE3 is a TVS diode designed for use in circuit protection applications. It has an operating voltage of 15V and a peak pulse power of 8000W. The diode is suitable for protecting components from electrical transients in automotive, industrial, and telecom applications. The device is designed with a combination of three p-n junctions connected in series. This configuration helps to increase the breakdown voltage and provides a higher peak power rating.

The MXP6KE15AE3 is designed with a silicon junction body, which helps to reduce the amount of heat generated during operations. This helps to reduce the chances of the diode overheating and helps to maintain its performance. The diode also features a low reverse leakage current, which helps to reduce power loss and further increases its efficiency.

When an over-voltage transient occurs, the voltage across the diode will increase. When the voltage exceeds the rated breakdown voltage of the device, the diode will begin to conduct. This will allow the current to be redirected away from sensitive components, thus protecting them. When the transient passes, the diode will cease to conduct and return to its non-conducting state.

The MXP6KE15AE3 provides a cost-effective and reliable solution for circuit protection applications. The device’s high breakdown voltage and peak power rating make it suitable for use in a wide range of applications. In addition, its low reverse leakage current helps to reduce power loss and further increases its efficiency.

The MXP6KE15AE3 is a reliable and cost effective solution for circuit protection applications. Its high breakdown voltage and peak power rating make it suitable for use in a wide range of automotive, industrial, and telecom applications. The device’s low reverse leakage current helps to reduce power loss and further increases its efficiency.

The specific data is subject to PDF, and the above content is for reference

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