MXPLAD15KP14AE3 Allicdata Electronics
Allicdata Part #:

1086-13212-ND

Manufacturer Part#:

MXPLAD15KP14AE3

Price: $ 53.94
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 14V 23.2V PLAD
More Detail: N/A
DataSheet: MXPLAD15KP14AE3 datasheetMXPLAD15KP14AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 49.03130
Stock 1000Can Ship Immediately
$ 53.94
Specifications
Voltage - Clamping (Max) @ Ipp: 23.2V
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 15000W (15kW)
Current - Peak Pulse (10/1000µs): 645A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

TVS - Diodes refers to transient voltage suppressors (TVSs) and diodes. TVSs are manufactured semiconductor devices that protect sensitive electronics from transient voltage surges or spikes and other electrical transients. Diodes are also semiconductor devices that involve the interaction between two electrodes, typically referred to as anode and cathode. They act as one-way check valves to allow electrical current to flow in only one direction.

The MXPLAD15KP14AE3 is a monolithic silicon avalanche television transient voltage suppression diode designed for use in battery-powered systems where stable operation is desired when subjected to transient overvoltage conditions. This device has a Peak Pulse Power rating of 15000 W and an operating junction temperature of 150°C. This diode typically is used as a protective measure for electrical transients.

The working principle of this device is based on avalanche breakdown and is generally known as a Zener diode breakdown. Avalanche breakdown happens in heavily doped silicon when a very high electric field is applied over its junction. This electric field is applied ionizing electrons and holes, creating mobility in the semiconductor and eliminating the depletion zone. This process produces a large current and this large current causes a Zener voltage across the PN junction. This Zener voltage which is based on the doping of the material can be used to suppress transients.

The application fields of MXPLAD15KP14A include data lines and power supply lines protection in high-power battery-powered systems, ac/dc differential voltage transient suppression, advanced circuit protection for portable electronics, automotive and industrial applications. This device also provides an integral clamping mechanism that can be used to protect against positive or negatively charged transients.

MXPLAD15KP14AE3 is an ideal device for applications that need reliable electrical protection against transient overvoltage and overcurrent. It is easy to use and requires minimal component count. This device is cost effective, as well as being highly reliable, and can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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