MXPLAD18KP51A Allicdata Electronics
Allicdata Part #:

MXPLAD18KP51A-ND

Manufacturer Part#:

MXPLAD18KP51A

Price: $ 38.65
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 51V 82.4V PLAD
More Detail: N/A
DataSheet: MXPLAD18KP51A datasheetMXPLAD18KP51A Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 35.14180
Stock 1000Can Ship Immediately
$ 38.65
Specifications
Current - Peak Pulse (10/1000µs): 219A
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 18000W (18kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 82.4V
Voltage - Breakdown (Min): 56.7V
Voltage - Reverse Standoff (Typ): 51V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS-Diodes are the protective diodes that are used to protect against electrical overstress (EOS). One type of such TVS-diodes is MXPLAD18KP51A, which not only provides overvoltage protection and signal protection, but also provides an improved level of protection. The MXPLAD18KP51A TVS diode is a silicon avalanche diode that is capable of conducting high pulse current pulses, while also providing ESD protection. This diode is used in many electronic systems due to its wide application range and high reliability.

The MXPLAD18KP51A TVS diode has a wide application field, primarily used in automotive electronics, consumer electronics, and industrial environments. It is suitable for high-speed circuits, high power circuits, high current systems, and harsh environments. It has a wide range of bipolar breakdown voltages ranging from 5V to 180V, and can be used to protect against high voltage surges, low voltage surges, and electrostatic discharge.

The working principle of the MXPLAD18KP51A TVS diode is based on the avalanche breakdown effect. As the voltage across the diode exceeds the breakdown voltage, electrons start to flow in the avalanche breakdown mode. These electrons cause further current to flow, thus creating an avalanche current. The avalanche current limits the voltage across the diode, thereby providing protection against transient overvoltages. The avalanche breakdown voltage of the diode can be adjusted to the desired level, and it is also able to withstand high pulse currents resulting from fast transients.

The MXPLAD18KP51A TVS diode is also able to provide ESD protection, due to the avalanche breakdown mechanism. As high voltage transients, such as from electrostatic discharge, enter the diode, the very low junction capacitance of the diode causes the voltage to rapidly rise across it. This causes an avalanche breakdown, which limits the voltage and prevents the ESD current from damaging the device.

Another feature of the MXPLAD18KP51A TVS diode is its wide operating temperature range. It is capable of working in temperatures ranging from -55C to +160C, which makes it suitable for use in harsh environment such as under the hood of a car or in a circuit which is exposed to extreme hot and cold conditions.

Overall, the MXPLAD18KP51A TVS diode is capable of providing improved protection from overvoltages, transients, electrostatic discharge, and other electrical overstress conditions. Its wide application range, wide temperature range, and high reliability make it a great choice for protecting sensitive electronic systems.

The specific data is subject to PDF, and the above content is for reference

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