MXPLAD36KP18CAE3

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TVS - Diodes are semiconductor devices typically used in electronic circuits to protect them against voltage transients, also known as ESD - Electrostatic Discharge. The MXPLAD36KP18CAE3 is a type of device which belongs to this family, commonly used for the protection of electronic systems. This article will discuss its application field, working principle and provide some input on specifications.

The MXPLAD36KP18CAE3 TVS diode is designed for protection against high-voltage surges, withstanding up to 36 kV disturbances. It is often used for the protection of communication systems, ranging from Ethernet-based copper networks to fiber-optic connections. Additionally, it can be utilized in automotive and industrial applications, where typically the suppression of high-energy transient events is required. Its robust construction and compliance with stringent Environmental Stress testing regulations (e.g. MIL-STD-883 and AEC-Q100) make it suitable for industrial and computer systems needing high levels of transient voltage immunity.

The MXPLAD36KP18CAE3 is based on a bidirectional Silicon Avalanche Diode (SAV) structure, where the protection parameter is determined by a Standby Reverse Voltage (VBR) of 18V or a Leakage Current (IR) of 42mA, whichever is greater. When ESD or high-voltage events occur, a voltage which exceeds the VBR level is present, triggering the avalanche breakdown reaction. The avalanche voltage is clamped to a level determined by the PN junction of the diode. This current is represented by the Typical Avalanche Characteristic (IAC) and it is dependent on the Maximum Peak Pulse Current (IPP) of the circuit. The clamping voltage is also impacted by the protection level of the device; lower VBR will result in higher clamping voltage and vice versa.

The MXPLAD36KP18CAE3 has a typical breakdown voltage of 18V and can withstand a maximum peak pulse current of 1300 A for an 8/20 µs waveform. It is rated at 40 A continuous forward current, with an operating junction temperature of -55°C to +125°C. The device also dissipates a low power of 0.87W. Its other specifications include a capacitance of 8pF at 1MHz, an ESD protection of 30KV, and a maximum leakage current of 4.2µA.

In conclusion, the MXPLAD36KP18CAE3 is a TVS diode desgined for protection against high-voltage surges, suitable for a wide range of communication systems, automotive and industrial applications. It is based on a bidirectional Silicon Avalanche Diode structure, with a breakdown voltage of 18V and a peak pulse current rating of 1300 A. The device has other excellent specifications, including a low power dissipation, an ESD protection of 30KV, and a maximum leakage current of 4.2µA.

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