MXPLAD36KP70A Allicdata Electronics
Allicdata Part #:

MXPLAD36KP70A-ND

Manufacturer Part#:

MXPLAD36KP70A

Price: $ 49.53
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 70V 113V PLAD
More Detail: N/A
DataSheet: MXPLAD36KP70A datasheetMXPLAD36KP70A Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 45.02700
Stock 1000Can Ship Immediately
$ 49.53
Specifications
Current - Peak Pulse (10/1000µs): 319A
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 36000W (36kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 113V
Voltage - Breakdown (Min): 77.8V
Voltage - Reverse Standoff (Typ): 70V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient voltage suppressor) diodes are semiconductor devices that are used to protect low voltage circuits from high voltage surges. The MXPLAD36KP70A is one such TVS diode. This diode is designed for applications requiring a robust, compact, and reliable Electro-Static Discharge (ESD) protection.

The MXPLAD36KP70A offers a wide range of surge protection capabilities, exceeding 8kV contact discharge and 15kV air discharge. It is designed to protect I/O ports and interface devices from voltage transients due to ESD, electrical fast transients (EFT) and other voltage surges caused by noise and/or other external disturbances. It can also protect against potential latch-up caused by excessive voltage and ionizing radiation.

The MXPLAD36KP70A is unique in its design, providing superior surge current capability compared to other TVS diodes. It has a low clamping voltage, allowing it to protect delicate circuits from high voltage surges while also maintaining high noise immunity. This makes it an excellent choice for a variety of applications such as telecom equipment, consumer electronics, automotive electronics, and industrial systems.

The working principle behind the MXPLAD36KP70A is based on the PN junction diode structure. It consists of two oppositely charged regions - the anode and the cathode - separated by a single layer of silicon. When a voltage greater than the PN junction breakdown voltage is applied across the diode, large amounts of current flow through the diode, thus protecting the circuit from the high voltage surge.

The MXPLAD36KP70A also has a built-in zener diode at the anode that limits the maximum voltage across the diode. This protects the device from destructive breakdowns caused by excessive voltages. The diode also uses a low leakage current design, allowing it to protect circuits with minimal current leakage.

Additionally, the MXPLAD36KP70A is designed for surface mounting, making it an ideal choice for applications where space is limited. It is also available in a variety of packages, making it easy to integrate into existing devices. This makes it an excellent choice for many applications that require reliable ESD protection in a small form factor.

In summary, the MXPLAD36KP70A is a TVS diode designed for applications requiring robust and reliable protection from ESD and other voltage surges. It has an innovative design that provides superior surge current capability and low clamping voltage, making it suitable for a variety of applications. Additionally, it is available in various packages, making it easy to integrate into existing designs. This makes it an ideal solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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