MXPLAD7.5KP16CAE3 Allicdata Electronics

MXPLAD7.5KP16CAE3 Circuit Protection

Allicdata Part #:

MXPLAD7.5KP16CAE3-ND

Manufacturer Part#:

MXPLAD7.5KP16CAE3

Price: $ 14.80
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE
More Detail: N/A
DataSheet: MXPLAD7.5KP16CAE3 datasheetMXPLAD7.5KP16CAE3 Datasheet/PDF
Quantity: 1000
100 +: $ 13.45130
Stock 1000Can Ship Immediately
$ 14.8
Specifications
Series: *
Part Status: Active
RoHS Status: RoHS Compliant
Description

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Transient Voltage Suppression (TVS) Diodes are one of the P-N semiconductor junctions diodes that are used to protect vulnerable electronic components from high levels of electrical transients and surges. MXPLAD7.5KP16CAE3 is one such device, designed as a low-profile Surface Mount Technology (SMT) device, with a RoHS compliant finish. Its application field is in power supply nodes and data/signal protective circuits of communication systems, computers, industrial control systems and other electronic systems. It can also be used for storage devices, automotive electronics and military/aerospace electronics.

Technology Specifications

The MXPLAD7.5KP16CAE3 device is packaged in a standard SMT package, with dimensions of 7.5mm x 7.5mm x 2.75mm. It has an operating junction temperature of -55°C to 175°C, ESD protection in excess of 25kV and an operating voltage of 7.5V. It has a peak surge current of 1000A (8/20μs) and offers excellent capacitance characteristics including a 6pF capacitance rating. It also offers low forward voltage characteristics, with a maximum operating voltage of 5V and a maximum forward current ampacity of 16A.

Working Principle

The MXPLAD7.5KP16CAE3 device works on the principle of clamping the transient voltage to a safe level. The device consists of two areas, the P-N junction and the metal oxide barrier layer between them. When there is a transient event, the positive part of the voltage feeds into the P-N junction, creating a built-in voltage across the junction due to the breakdown of the metal barrier layer between them. This process of breakdown also creates an avalanche current that further fastens the breakdown process. The avalanche current is then passed through the P-N junction and the device to the power system.

The avalanche current acts as a current-driven avalanche diode and partially neutralizes the reverse bias voltage applied on the device, such that the device is able to protect the protected circuit. The transient energy absorbed by the device is dissipated as heat through the package and leads, and limits the amount of energy that passes onto the protected circuit.

Conclusion

The MXPLAD7.5KP16CAE3 provides a reliable solution for the protection of sensitive components from transient voltage events. With its operating voltage range of 7.5V, maximum forward current ampacity of 16A, and peak surge current of 1000A (8/20μs), the device offers excellent protection from transient voltage events and surges. It is well suited for applications such as power supply nodes, communication systems, computers, automotive electronics, industrial control systems, storage devices and other electronic systems.

The specific data is subject to PDF, and the above content is for reference

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