MXPLAD7.5KP16CAE3 Circuit Protection |
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| Allicdata Part #: | MXPLAD7.5KP16CAE3-ND |
| Manufacturer Part#: |
MXPLAD7.5KP16CAE3 |
| Price: | $ 14.80 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | MXPLAD7.5KP16CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 13.45130 |
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS Compliant |
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Transient Voltage Suppression (TVS) Diodes are one of the P-N semiconductor junctions diodes that are used to protect vulnerable electronic components from high levels of electrical transients and surges. MXPLAD7.5KP16CAE3 is one such device, designed as a low-profile Surface Mount Technology (SMT) device, with a RoHS compliant finish. Its application field is in power supply nodes and data/signal protective circuits of communication systems, computers, industrial control systems and other electronic systems. It can also be used for storage devices, automotive electronics and military/aerospace electronics.
Technology Specifications
The MXPLAD7.5KP16CAE3 device is packaged in a standard SMT package, with dimensions of 7.5mm x 7.5mm x 2.75mm. It has an operating junction temperature of -55°C to 175°C, ESD protection in excess of 25kV and an operating voltage of 7.5V. It has a peak surge current of 1000A (8/20μs) and offers excellent capacitance characteristics including a 6pF capacitance rating. It also offers low forward voltage characteristics, with a maximum operating voltage of 5V and a maximum forward current ampacity of 16A.
Working Principle
The MXPLAD7.5KP16CAE3 device works on the principle of clamping the transient voltage to a safe level. The device consists of two areas, the P-N junction and the metal oxide barrier layer between them. When there is a transient event, the positive part of the voltage feeds into the P-N junction, creating a built-in voltage across the junction due to the breakdown of the metal barrier layer between them. This process of breakdown also creates an avalanche current that further fastens the breakdown process. The avalanche current is then passed through the P-N junction and the device to the power system.
The avalanche current acts as a current-driven avalanche diode and partially neutralizes the reverse bias voltage applied on the device, such that the device is able to protect the protected circuit. The transient energy absorbed by the device is dissipated as heat through the package and leads, and limits the amount of energy that passes onto the protected circuit.
Conclusion
The MXPLAD7.5KP16CAE3 provides a reliable solution for the protection of sensitive components from transient voltage events. With its operating voltage range of 7.5V, maximum forward current ampacity of 16A, and peak surge current of 1000A (8/20μs), the device offers excellent protection from transient voltage events and surges. It is well suited for applications such as power supply nodes, communication systems, computers, automotive electronics, industrial control systems, storage devices and other electronic systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MXPLAD6.5KP150CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 150V 243V PLAD |
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| MXPLAD18KP45CAE3 | Microsemi Co... | 44.65 $ | 1000 | TVS DIODE 45V 72.7V PLAD |
| MXPLAD36KP45AE3 | Microsemi Co... | 49.53 $ | 1000 | TVS DIODE 45V 72.7V PLAD |
| MXPLAD36KP20CA | Microsemi Co... | 57.93 $ | 1000 | TVS DIODE 20V 34V PLAD |
| MXPLAD36KP43CAE3 | Microsemi Co... | 57.93 $ | 1000 | TVS DIODE 43V 69.4V PLAD |
| MXPLAD18KP17CA | Microsemi Co... | 44.65 $ | 1000 | TVS DIODE 17V 27.6V PLAD |
| MXPLAD15KP100A | Microsemi Co... | 53.94 $ | 1000 | TVS DIODE 100V 162V PLAD |
| MXPLAD15KP16A | Microsemi Co... | 53.94 $ | 1000 | TVS DIODE 16V 26V PLAD |
| MXPLAD15KP33AE3 | Microsemi Co... | 53.94 $ | 1000 | TVS DIODE 33V 53.3V PLAD |
| MXPLAD15KP78CAE3 | Microsemi Co... | 57.84 $ | 1000 | TVS DIODE 78V 126V PLAD |
| MXPLAD36KP170CAE3 | Microsemi Co... | 57.93 $ | 1000 | TVS DIODE 170V 275V PLAD |
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| MXPLAD7.5KP33A | Microsemi Co... | 14.46 $ | 1000 | TVS DIODE |
| MXPLAD7.5KP11CAE3 | Microsemi Co... | 14.8 $ | 1000 | TVS DIODE |
| MXPLAD7.5KP26CA | Microsemi Co... | 15.03 $ | 1000 | TVS DIODE |
| MXPLAD18KP16A | Microsemi Co... | 38.65 $ | 1000 | TVS DIODE 16V 26V PLAD |
| MXPLAD18KP90A | Microsemi Co... | 38.65 $ | 1000 | TVS DIODE 90V 146V PLAD |
| MXPLAD36KP18CA | Microsemi Co... | 57.93 $ | 1000 | TVS DIODE 18V 30.8V PLAD |
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| MXPLAD7.5KP17AE3 | Microsemi Co... | 14.23 $ | 1000 | TVS DIODE |
| MXPLAD7.5KP28AE3 | Microsemi Co... | 14.23 $ | 1000 | TVS DIODE |
| MXPLAD18KP15CA | Microsemi Co... | 44.65 $ | 1000 | TVS DIODE 15V 24.4V PLAD |
| MXPLAD18KP16CAE3 | Microsemi Co... | 44.65 $ | 1000 | TVS DIODE 16V 26V PLAD |
| MXPLAD18KP7.0CAE3 | Microsemi Co... | 44.65 $ | 1000 | TVS DIODE 7V 12V PLAD |
| MXPLAD36KP36A | Microsemi Co... | 49.53 $ | 1000 | TVS DIODE 36V 58.1V PLAD |
| MXPLAD15KP85CAE3 | Microsemi Co... | 57.84 $ | 1000 | TVS DIODE 85V 137V PLAD |
| MXPLAD36KP160CAE3 | Microsemi Co... | 57.93 $ | 1000 | TVS DIODE 160V 259V PLAD |
| MXPLAD30KP36CA | Microsemi Co... | 70.66 $ | 1000 | TVS DIODE 36V 58.1V PLAD |
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| MXPLAD15KP60CA | Microsemi Co... | 57.84 $ | 1000 | TVS DIODE 60V 96.8V PLAD |
| MXPLAD36KP28CAE3 | Microsemi Co... | 57.93 $ | 1000 | TVS DIODE 28V 46.4V PLAD |
| MXPLAD30KP200A | Microsemi Co... | 62.17 $ | 1000 | TVS DIODE 200V 322V PLAD |
| MXPLAD6.5KP17AE3 | Microsemi Co... | 13.8 $ | 1000 | TVS DIODE 17V 27.6V PLAD |
| MXPLAD18KP17CAE3 | Microsemi Co... | 44.65 $ | 1000 | TVS DIODE 17V 27.6V PLAD |
| MXPLAD15KP10A | Microsemi Co... | 53.94 $ | 1000 | TVS DIODE 10V 17V PLAD |
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MXPLAD7.5KP16CAE3 Datasheet/PDF