MXRT100KP100CAE3 Allicdata Electronics
Allicdata Part #:

1086-13682-ND

Manufacturer Part#:

MXRT100KP100CAE3

Price: $ 50.71
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 100V 197V CASE 5A
More Detail: N/A
DataSheet: MXRT100KP100CAE3 datasheetMXRT100KP100CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 46.09990
Stock 1000Can Ship Immediately
$ 50.71
Specifications
Voltage - Clamping (Max) @ Ipp: 197V
Supplier Device Package: Case 5A (DO-204AR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 100000W (100kW)
Current - Peak Pulse (10/1000µs): --
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 111V
Voltage - Reverse Standoff (Typ): 100V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVSs - Transient Voltage Suppressors, or commonly referred to as Diodes - are widely used devices in the electronic industry to protect circuits and electronics from destructive voltage transients which could occur due to lightning or Electro Magnetic Interference (EMI). The TVS Diode MXRT100KP100CAE3 is a dual MOSFET device which can both protect against voltage transients and also switch very quickly between two applications.

The MXRT100KP100CAE3 is a very fast switching device with very low leakage currents of only 10pA, which means that it can be used to protect sensitive circuits such as industrial controllers or medical equipment from voltage transients which could be generated by nearby lighting strikes or other high voltage sources.

The MXRT100KP100CAE3 is a bidirectional diode structure which is designed to switch quickly to protect both the connected devices and the circuit itself. It is a very low capacitance device which makes it ideal for high frequency applications where fast switching is essential.

The working principle behind the MXRT100KP100CAE3 is based on the P-N junction diode structure, where it can be used in either Reverse Bias or Forward Bias mode depending on the application. In Forward Bias mode, the diode acts like a normal diode and has a very low voltage drop which is ideal for protecting circuits from overvoltage events. In Reverse Bias mode, the diode serves as a protective device by blocking any voltage transients which exceed the diode’s breakdown voltage rating.

The MXRT100KP100CAE3 is especially useful in applications which require high switching speed such as power converters, motor controllers and LED lighting. It has a maximum reverse breakdown voltage of 100V thus providing protection against voltage transients of up to 100V. The diode also provides protection against ESD events such as surges and spikes with a maximum peak current of 100A.

The MXRT100KP100CAE3 is also capable of switching very quickly, with a maximum switching time of 100ns. This makes it ideal for applications where switching speed is critical such as switching between different power sources.

The MXRT100KP100CAE3 is an excellent choice for applications where fast switching and robust protection against voltage transients is required. It is both fast and reliable, and offers excellent protection against ESD events as well as overvoltage and undervoltage conditions.

The specific data is subject to PDF, and the above content is for reference

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