MXSMCJ60A Allicdata Electronics

MXSMCJ60A Circuit Protection

Allicdata Part #:

1086-14621-ND

Manufacturer Part#:

MXSMCJ60A

Price: $ 12.36
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 60V 96.8V DO214AB
More Detail: N/A
DataSheet: MXSMCJ60A datasheetMXSMCJ60A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.23910
Stock 1000Can Ship Immediately
$ 12.36
Specifications
Voltage - Clamping (Max) @ Ipp: 96.8V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 15.5A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 66.7V
Voltage - Reverse Standoff (Typ): 60V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are an important component in the protection and regulation of electrical circuits and systems. They are used in a wide range of applications where a high voltage tolerance is required. One type of TVS - Diode is the MXSMCJ60A, which provides protection against ESD discharges up to 150V, and is suitable for use in a range of applications.

The MXSMCJ60A is a three-terminal device designed using silicon avalanche technology to provide a bidirectional ESD protection to exposed and internal circuits. Its three terminals consist of a +V terminal, a -V terminal, and an R terminal. The device is capable of withstanding multiple ESD events of up to ±150V, and is capable of low capacitance performance of only 0. 3pF. This makes the device suitable for use on high-speed data transmission lines, such as Ethernet, USB, and RF applications.

The working mechanism of the MXSMCJ60A is based on an N-type and a P-type channel, connected by an avalanche zone. When a reverse voltage, or ESD event, is applied to the device, the avalanche zone will avalanche breakdown. This creates a low-impedance path between the N and P-type channels, draining the excess charge safely through the R terminals. After the ESD event, the device will automatically recover back to its normal state, ready to provide further protection.

Due to its high ESD protection, low capacitance and robust construction, the MXSMCJ60A is suitable for a wide range of applications. It is especially well-suited for low-voltage circuits, as it has the ability to provide ESD protection without affecting the signal integrity. It is also ideal for high-speed data communication, where its low capacitance ensures minimal signal losses. Other applications where the device is commonly used include mobile phones, digital cameras, and portable electronic devices.

In summary, the MXSMCJ60A is a three-terminal TVS - Diode designed to provide bidirectional ESD protection in a range of applications. It is capable of providing protection up to ±150V, and is suitable for use in high-speed data transmission lines where its low capacitance ensures minimal signal losses. Its robust design makes it suitable for use in mobile phones, digital cameras, and portable electronic devices.

The specific data is subject to PDF, and the above content is for reference

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