Allicdata Part #: | MZ0912B100Y,114-ND |
Manufacturer Part#: |
MZ0912B100Y,114 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | TRANSISTOR POWER NPN SOT443A |
More Detail: | RF Transistor NPN 20V 6A 1.215GHz 290W Chassis Mou... |
DataSheet: | MZ0912B100Y,114 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | 1.215GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 7.6dB |
Power - Max: | 290W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Current - Collector (Ic) (Max): | 6A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-443A |
Supplier Device Package: | CDFM2 |
Base Part Number: | MZ0912 |
Description
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The MZ0912B100Y,114 is a type of Transistor that falls into the category of Bipolar (BJT) and RF transistors. It features a small size, low power requirements, and high frequency operation. This type of transistor is commonly used in RF communication systems, in amplifiers, and for switching.The main function of the MZ0912B100Y,114 is to operate as a switch. The device, known as a field-effect transistor (FET), uses a voltage to control the flow of electrons from the collector to the emitter, allowing for high-frequency switching of signals. This device is also key for applications requiring low power consumption, such as battery-operated devices.In an RF amplifier, the MZ0912B100Y,114 can be used to amplify weak signals, allowing them to travel further distances with greater accuracy. This type of transistor is also widely used in communications systems, such as cell phone networks, to support high data rates and low noise levels. Additionally, its low power requirements makes it a great choice for battery-operated devices.The working principle of the MZ0912B100Y,114 relies on its field-effect transistor (FET) design. The FET consists of two electrodes, the source and the drain, that are separated by a thin layer of semiconductor material. When a voltage is applied across the electrodes, the electrons in the region between the electrodes become excited, allowing a current to flow from one electrode to the other. This current can then be used to amplify or modulate signals.In summary, the MZ0912B100Y,114 is a type of bipolar transistors commonly utilized for RF applications. This transistor offers low power consumption, high switching frequencies, and great signal amplification capabilities. Thanks to its FET design, it has the ability to efficiently control the flow of electrons between its two electrodes, allowing for a wide range of signals to be transmitted and amplified.
The specific data is subject to PDF, and the above content is for reference
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