N01L63W2AT25I

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   sales@allicdata.com

1. Describe

N01L63W2AT25I is an integrated storage device Includes 1 Mbit static random access memory It is organized into 65,536 words in 16 bits. exist Semiconductor advanced CMOS technology Provides high-speed performance and ultra-low strength. The device uses two chip enable (CE1 and CE2) Control and output enable (OE) to Allows easy memory expansion. Byte control (UB and LB) High byte and low byte allowed Independent access, can also be used for Deselect the device. N01L63W2A is the best choice Suitable for various applications where low power consumption is critical For example, spare batteries and handheld devices. The device can operate in a wide range The temperature range is -40oC to +85oC, and is Provide a package compatible with JEDEC standards Comparing with other standard 64Kb x 16 SRAM.

2. Features

    1. Single Wide Power Supply Range: 2.3 to 3.6 Volts

    2. Very low standby current: 2.0µA at 3.0V (Typical)

    3. Very low operating current: 2.0mA at 3.0V and 1µs (Typical)

    4. Very low Page Mode operating current: 0.8mA at 3.0V and 1µs (Typical)

    5. Simple memory control:  Dual Chip Enables (CE1and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion

    6. Low voltage data retention: Vcc = 1.8V

    7. Very fast output enable access time: 30ns OE access time

    8. Automatic power down to standby mode

    9. TTL compatible three-state output driver

  10. Compact space saving BGA package available

3. Pin Configuration

4. Pin Descriptions

5. Package overview