N01S830HAT22I Allicdata Electronics
Allicdata Part #:

N01S830HAT22IOS-ND

Manufacturer Part#:

N01S830HAT22I

Price: $ 2.74
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC SRAM 1M SPI 20MHZ 8TSSOP
More Detail: SRAM Memory IC 1Mb (128K x 8) SPI 20MHz 8-TSSOP
DataSheet: N01S830HAT22I datasheetN01S830HAT22I Datasheet/PDF
Quantity: 259
1 +: $ 2.48850
10 +: $ 2.25540
100 +: $ 1.96781
500 +: $ 1.88829
1000 +: $ 1.79528
Stock 259Can Ship Immediately
$ 2.74
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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N01S830HAT22I is a dynamic random access memory (DRAM) type of memory module or chip. It is commonly used in computing, musical synthesizers, digital audio workstations, and other digital devices for high-speed, high-volume direct data transfer. This type of memory is designed to provide fast and reliable access to large memory resources. It is capable of providing very fast random access and is often used to store critical data and executable code that require constant access and fast data retrieval.

As a DRAM, N01S830HAT22I provides a fast and efficient way to transfer large amounts of data with minimal latency. It is an integrated circuit that consists of an array of memory cells or bit-cells, which can be addressed, written to, and read from. Each cell is composed of an access transistor and a storage capacitor, which stores the bit until a refresh operation is performed. The access transistor and capacitor are connected to a single line that is connected to a data bus for data read and write operations.

N01S830HAT22I is particularly useful for applications requiring large memory resources, such as high-end gaming, multimedia applications, and high-performance computing. It can also be used in applications requiring both high reliability and low power consumption, such as embedded systems and automotive applications. Additionally, the high-speed access times and improved efficiency of the device can be beneficial for those who require data storage and retrieval in real-time.

N01S830HAT22I utilizes the MOS (metal-oxide-semiconductor) process to store data in its memory cells. Its working principle is based on capacitive charge transfer (CCT), in which electrons are stored in the semiconductor material and are used to create an electric field between the storage capacitor and its access transistor. When a high voltage is applied, the electric field dissipates and the data stored in the capacitor decides the state of the bit-cell. This CCT process enables the memory to store large amounts of data without the use of a lot of power and without sacrificing reliability.

N01S830HAT22I is a reliable memory module that enables rapid data transfer between the processor and other components in the system. It can be used to store large amounts of data in a variety of applications, including high performance computing, high-end gaming, embedded systems, and automotive applications. Its use of CCT and MOS technology provides reliability and power efficiency, enabling the memory modules to deliver data quickly and reliably.

The specific data is subject to PDF, and the above content is for reference

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