N02L83W2AT25I

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1. Describe

N02L83W2AT25I is an integrated storage device Contains a 2 Mbit static random access memory It is organized into 262,144 words in 8 bits. Device Design and manufacture with ON Semiconductor advanced CMOS technology Provides high-speed performance and ultra-low strength. The device uses two chip enable (CE1 and CE2) Control and output enable (OE) to Allows easy memory expansion. This N02L83W2A is best for various applications Where low power consumption is critical, such as backup batteries And handheld devices. The device can run In -40oC to very wide temperature range +85oC, in line with JEDEC standards Package compatible with other standards 256Kb x 8 SRAM

2. Features

    1. Single Wide Power Supply Range: 2.3 to 3.6 Volts

    2. Very low standby current: 2.0µA at 3.0V (Typical)

    3. Very low operating current: 2.0mA at 3.0V and 1µs (Typical)

    4. Very low Page Mode operating current: 0.8mA at 3.0V and 1µs (Typical)

    5. Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion

    6. Low voltage data retention: Vcc = 1.8V

    7. Very fast output enable access time 30ns OE access time

    8. Automatic power down to standby mode

    9. TTL compatible three-state output driver

3. Pin Configuration

4. Pin Descriptions