N25S830HAT22I

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Modern technology has rapidly changed our daily lives, making it easier to store and manage data. Memory is a type of storage device that stores digital data as electrical signals. The N25S830HAT22I is a modern memory device designed for use in industry and embedded applications.

The N25S830HAT22I is a multi-level cell (MLC) Non-Volatile Memory device, with a capacity of 8 Gigabits (Gb) at 1.8 volts. This device is a low power, high density memory that offers high operation speed, stability, and reliability. It is manufactured using 3D Charge Trap Flash (CTF) technology, which involves the use of a three-layer cell architecture to achieve higher performance than traditional MLC architectures.

The N25S830HAT22I operates on a Serial Peripheral Interface (SPI) bus. It is pin and module-compatible with other flash memory devices in the same family. It has an address field size of 17 bits and a system data bus width of 8 bits. It also contains a protection register that can be programmed to protect your data from accidental erasures or corruptions.

The N25S830HAT22I is well-suited for a variety of applications, such as consumer electronics, automotive, industrial, medical and consumer applications. It can be used as a storage device for mapping, logging and system monitoring information. It is ideal for applications that require high reliability and data security, due to its advanced features. It features advanced error correction code (ECC) capabilities, and its robust program/erase cycles make it suitable for wear leveling and data retention applications.

In terms of its working principle, the N25S830HAT22I operates by storing charges in a three-layer cell architecture. This cell architecture is made up of three layers: a substrate layer, a charge collection layer and a charge-holding layer. The substrate layer contains the transistors that store the charges. The charge collection layer stores the charged electrons, and the charge-holding layer stores the charges for longer durations. The device works by using the data pins to read and write data from/to the memory cells. It uses source/drain lines to transfer data, and gate lines for amplifying and controlling signals to access and modify a cell.

The N25S830HAT22I uses an advanced 4K Page Program/Erase architecture to efficiently speed up programming and erasing data, allowing for shorter command times. Its multiple protection features and programmable features allow it to be adapted to meet specific user requirements. The device’s built-in ECCs also ensure data integrity is maintained when transferred and stored.

In conclusion, the N25S830HAT22I is a performance-orientated, high-density, and low-power memory device. It offers high reliability levels and multiple protect features, and its advanced cell architecture allows for superior programming and erasing speeds. The N25S830HAT22I is a suitable device for a variety of embedded and industry applications that require high reliability and data security.

The specific data is subject to PDF, and the above content is for reference