N25W032A11EF640F TR Allicdata Electronics
Allicdata Part #:

N25W032A11EF640FTR-ND

Manufacturer Part#:

N25W032A11EF640F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M SPI 108MHZ 8VDFPN
More Detail: FLASH - NOR Memory IC 32Mb (8M x 4) SPI 108MHz 8-...
DataSheet: N25W032A11EF640F TR datasheetN25W032A11EF640F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (8M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (6x5) (MLP8)
Description

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Memory

The N25W032A11EF640F TR (hereafter referred as N25W) is a 32Mbit flash memory that is chosen for use in a variety of electronic applications. A flash memory is a type of non-volatile, rewritable memory that requires no power to maintain the stored data, making it ideal for applications such as storing data retained during power cycles or data that needs to be updated and changed often like for firmware updates. As a part of the NAND Flash family, the N25W is able to offer users a low-cost solution for system and application storage.

The N25W is built high-grade technology manufacturing processes, allowing it to achieve extremely low soft error rates. It has a simple and robust interface which makes it ideal for applications that require multiple erase and program cycles. Additionally, it offers multiple data protection mechanisms, robust write and erase performance, and a wide temperature range.

The N25W contains an array of cells arranged in an array to store data. Each cell is composed of a floating gate, which is a thin insulator layer that separates the control gate from the surface of the memory array. A control gate is used to allow electrons to move between the floating gate and the memory array.Each cell can be programmed and erased independently. Programming is done by applying a voltage difference across the cell, causing electrons to be generated and thus stored in the floating gate. Erasing is also done by applying a voltage difference but this time the electrons are released from the floating gate back into the array.

The main application field for the N25W is in mobile devices. The N25W offers users a mobile memory solution that is robust, low-power and cost-effective. Additionally, its write and erase performance, low soft error rate and temperature range make it an ideal solution for applications that require frequent writes.

In summary, the N25W offers users a 32Mb flash memory solution that makes it ideal for a variety of applications. Its robust interface and robust write and erase performance make it suitable for applications that require multiple erase and program cycles, while its low-power and temperature range make it perfect for mobile applications.

The specific data is subject to PDF, and the above content is for reference

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