NE202930-A

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A NE202930-A is a bipolar transistor device intended for use in RF and microwave applications. It is a high-frequency BJT (bipolar junction transistor) that is capable of operating from a frequency range of 250 MHz to 1GHz and can handle up to 25 W of power.

The NE202930-A is based on a bipolar silicon substrate, which allows it to achieve a high-frequency linearity and gain performance. The device consists of three terminals; the emitter (E), the base (B) and the collector (C). In order to achieve its high-frequency performance, the NE202930-A features several different design features.

The NE202930-A\'s base-collector (BC) spacing is significantly reduced, as compared to other transistors. This allows for increased gain efficiency and excellent linearity performance at higher-frequencies. Additionally, the base-emitter (BE) spacing is also tailored for optimal gain performance. These design features help the NE202930-A to achieve the desired RF and microwave performance.

The NE202930-A also features a high-power PNP (passive-emitter type) design that is capable of handling power levels up to 25 watts. This makes the NE202930-A suitable for applications such as amplifiers, active filters, combiners, mixers, and switches. In addition, the NE202930-A also features an integrated emitter-ballast resistor, which helps to reduce losses in the system and improve overall efficiency.

The NE202930-A is designed to operate in a wide range of environments. It can operate in temperatures up to 175°C and at frequencies up to 1 GHz. The device is designed to operate with a low-power supply of 3.3 V. Its low operating voltage allows for increased performance and efficiency.

In order to ensure the performance of the NE202930-A, the device is evaluated against stringent quality standards. It is subjected to a rigorous testing process in order to ensure consistency and reliability. Additionally, the NE202930-A is tested for radiation hardness in order to ensure its performance in harsh environments.

The NE202930-A is an ideal device for use in a wide range of RF and microwave applications. Its high-frequency performance, high-efficiency power handling, and high temperature capability make it a great choice for designers seeking a reliable, high-performance device. Additionally, its low operating voltage, integrated emitter-ballast resistor, and radiation hardening make the NE202930-A a reliable choice for many applications.

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