NE58219-T1-A Discrete Semiconductor Products

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 5V
Current - Collector (Ic) (Max):	60mA
Operating Temperature:	125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	3-SuperMiniMold (19)
Base Part Number:	NE58219

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Introduction

The NE58219-T1-A is a NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications. It is designed for high-frequency portable and mobile radio applications, such as mobile handsets, walkie talkies, and wireless data communicators. It is designed with an epitaxial planar base and collector, which makes it highly efficient at RF signals of 100MHz and up. It can also provide up to 500mW of output at that frequency. Its TO-92-style case makes it suitable for a wide range of applications.

Applications

The NE58219-T1-A can be used in a wide variety of applications due to its high-frequency capabilities and its ability to provide high-power output. It is suitable for use in RF power amplifier circuits, RF switching circuits, and RF mixer circuits, due to its high power output and low noise figure. It can also be used in audio amplifiers and in switching circuits such as relays, due to its wide voltage and frequency range, and its low collector-emitter saturation voltage.

Working Principle

The NE58219-T1-A is a NPN BJT, which means it has three terminals: the base, the collector, and the emitter. The base-emitter junction acts as a forward-biased diode, allowing current to flow from the base to the emitter. When a small current flows from the base to the emitter, a large current is allowed to flow from the collector to the emitter. This is known as current amplification. This is the basis for the operation of BJTs.The NE58219-T1-A has very low noise and excellent gain characteristics, making it ideal for RF applications. The transistor is constructed with a planar epitaxial base, which provides improved device reliability and thermal resistance. It also has an optimized bias point, allowing it to operate more efficiently at higher frequencies.

Conclusion

The NE58219-T1-A is a NPN bipolar junction transistor (BJT) designed for high-frequency portable and mobile radio applications. It is suitable for use in RF power amplifiers, RF switching circuits, and RF mixer circuits, as it provides high power output and low noise. Its epitaxial planar base and collector make it highly efficient at frequencies of 100MHz and up, and its TO-92-style case make it suitable for a wide range of applications. The NE58219-T1-A is an excellent choice for RF applications due to its excellent gain characteristics and low noise figure.

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