NE696M01-T1-A Allicdata Electronics

NE696M01-T1-A Discrete Semiconductor Products

Allicdata Part #:

NE696M01-ACT-ND

Manufacturer Part#:

NE696M01-T1-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANSISTOR NPN 2GHZ SOT-363
More Detail: RF Transistor NPN 6V 30mA 14GHz 150mW Surface Moun...
DataSheet: NE696M01-T1-A datasheetNE696M01-T1-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.6dB @ 2GHz
Gain: --
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: NE696
Description

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NE696M01-T1-A (NK96) is an NPN small signal Power Transistor with Gold Metal Can Package specially designed for RF purpose. The major applications of NE696M01-T1-A include RF amplifiers, small signal oscillators, impedance matching circuits, Class B push pull and Class C amplifiers. It has its operation approved by many governments of the world and is ideally suited for 800 MHz broadband communication system.

As an NPN Power Transistor, the NE696M01-T1-A is a three-terminal semiconductor device capable of electronically controlling current flow. It is basically made up of three layers namely the emitter, base, and collector. The NE696M01-T1-A works when a positive voltage is applied to the base, this creates a depletion layer between the base and collector and drives a small current flow from the base to the collector. The voltage on the collector can then be varied, this in turn controls the current flow into the collector. Thus the small signal power transistor NE696M01-T1-A can amplify signals in a small signal RF applications.

The NE696M01-T1-A has many features making it a suitable choice for RF applications. It has a high gain of 800-1000 MHz, a wide range of frequency response and high power sensitivity. This power transistor also has high gain and good matching characteristics. The current gain of this device is also quite high which further makes it suitable for RF applications. The power rating of this device is also high, ranging from 0.625 W – 1000 W.

One of the most important features of the NE696M01-T1-A is its low noise characteristic. This makes it suitable for low noise RF applications. Its low noise level also makes it an ideal choice for broadband communication systems. The NE696M01-T1-A also has very good linearity characteristics and has low temperature coefficient.

The NE696M01-T1-A is capable of operating from a single supply voltage with a saturation voltage of less than 160 mV – 200 mV. The NE696M01-T1-A can be easily integrated into a PCB or other components requiring power amplification. The package of the device is designed for printed circuiting and comes with gold metal can for better reliability and life.

The NE696M01-T1-A is a versatile small signal power transistor with excellent performance in high frequency applications. It has a wide frequency range and good correlation between input and output characteristics. Due to its high gain, good linearity and low noise, NE696M01-T1-A provides superior performance in wireless communication equipment and other general purpose circuits. It also has very favorable thermal and environmental characteristics, making it suitable for most applications.

The specific data is subject to PDF, and the above content is for reference

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