NE97833-A

The NE97833-A features a 0.6 x 0.6 mm chip size, with a maximum Junction Emitter voltage of 125V, and a maximum collector dissipation of 200mW. Its maximum Collector current is 200mA. It is manufactured to offer high-frequency response, low noise, and low distortion, with Alpha and Beta values that are close to the industry standards.

The working principle of NE97833-A is the same with any other BJT. electrons from the emitter diffused through the base, into the collector region. At the same time, a hole-flow will also occur, and a larger number of electrons are coming to the emitter region. Depending on the Emitter-Base (BJ) junction and Base-Collector (BC) junction, the electrical current resulting from this flow can be controlled.

Additionally, NE97833-A is designed with the emitter ballasting to control the gain and frequency response. Furthermore, its full gold metallization is optimized to reduce thermal resistance and allow the BJT to reach higher power dissipation characteristics, making it suitable even at higher frequencies.

Furthermore, the NE97833-A incorporates an integrated protection diode to ensure reverse breakdown protection. This protects the BJT from DC voltages and also from transient inductive loads.

In conclusion, NE97833-A is an excellent small signal bipolar junction transistor designed for RF applications. It features high-frequency response, low noise, and low distortion, with Alpha and Beta values that are close to the industry standards. The chip size is 0.6 x 0.6 mm, with a maximum Junction Emitter voltage of 125V and a maximum collector dissipation of 200mW. Its integrated protection diode ensures reverse breakdown protection, while its full gold metallization design allows it to reach higher power dissipation characteristics than most BJTs.