NKRSMBIWY

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Introduction

NKRSMBIWY (Nano Resistance Measurement Bridge Integrated with Wafer Yield) is a technology developed at the beginning of 21st century for integrated circuit (IC) wafer electrical metrology. It is an improved version of four-point probe technique (4PP), and possesses a potential to revolutionize the resistance measurement technology. NKRSMBIWY has been utilized for measuring resistances in narrow geometries and, with its high accuracy and fast speed, it can help to reduce costs of production and testing of IC wafers.

Application Field and Working Principle

The working principle of NKRSMBIWY is as follows. Generally, resistance of sub-micron structures on a wafer can be measured by utilizing two bridges. A 4PP technique encapsulates the wafer into two shielded housing units, one of which is called driving bridge, while the other is called measurement bridge. NKRSMBIWY uses the same principle but instead of two bridges, only one is used in the form of a bridge head. This eliminates the need of alignment of the two bridges, and also removes the need for shielded housing. This helps in shortening the resistance measurement time as it does not involve any manipulation of the wafer.

The bridge head consists of four chromium-to-chrome-nickel tips, which are used to measure the resistance. The measured resistance is stored as a digital value and is displayed on the bridge head. The NKRSMBIWY technique consists of a pair of probes, which are placed on each side of the wafer and the resistance is monitored between these two points.

The most common application of NKRSMBIWY is in the fabrication of sub-micron ICs. The measurements made by NKRSMBIWY enable designers to identify and optimize the resistance in very small structures. The measurements made by NKRSMBIWY are more accurate than the four-point probe technique, and can be used for precisely measuring the resistances in different regions on the same wafer even when the geometry and structure of these regions vary significantly. Moreover, this technology can also be used for evaluating the process parameters of sub-micron devices during the wafer fabrication.

Apart from IC fabrication, NKRSMBIWY can also be used in other fields like testing and characterization of semiconductor materials and their components. Beside this, NKRSMBIWY can also be used for the measurement of resistances in integrated circuits which are mounted on boards for testing and evaluation.

Conclusion

NKRSMBIWY is a new and improved version of four-point probe technique and it has the potential to revolutionize the resistance measurement technology. The most common application of NKRSMBIWY is in the fabrication of sub-micron ICs, however, this technology can also be used for other sorts of resistance measurements. Furthermore, it is capable of measuring resistances in different regions on the same wafer even when the geometry and structure of these regions vary significantly. NKRSMBIWY also helps to reduce the costs of production and testing of IC wafers. Therefore, NKRSMBIWY is a valuable tool for IC designers and can have a significant impact on the microchip production process.

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