NM25C04M8 Allicdata Electronics
Allicdata Part #:

NM25C04M8-ND

Manufacturer Part#:

NM25C04M8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EEPROM 4K SPI 1MHZ 8SO
More Detail: EEPROM Memory IC 4Kb (512 x 8) SPI 1MHz 8-SO
DataSheet: NM25C04M8 datasheetNM25C04M8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: NM25C04
Description

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NM25C04M8 is a memory device recently released by the NXP Semiconductor company. It is specifically designed for use in consumer and industrial products, such as consumer electronics, automotive, and medical applications. The device features 4K bits and is organized in 100 byte blocks, providing 4K byte memory in a 8-pin package. It also has an ultra-low current mode for less critical applications, such as remote control and standby power for consumer electronics.

The NM25C04M8 contains four different types of memory, a static random access memory (SRAM), a read-only memory (ROM), an eraseable programmable ROM (EPROM) and a non-volatile random access memory (NVRAM). The SRAM is ideal for dynamic memory applications and provides a fast, low-power memory solution. The ROM contains permanent programmed data and instructions that are not changeable. The EPROM is a form of ROM that allows users to reprogram the data and instructions as needed. The NVRAM is a type of non-volatile memory that retains its content, even when power is removed.

The NM25C04M8 provides an ideal solution for designs that require a combination of memory types in a small footprint. Its small size and low voltage operation make it an attractive option for many embedded applications. The device is able to operate on a single supply voltage ranging from 1.8 to 6.0 volts, allowing for easier integration into existing systems.

The working principle of NM25C04M8 is as follows: The device operates by connecting a series of address inputs to pins 2-8 along the top of the component or by selecting a group of four individual address pins. Once the address is selected, a logic high on the chip select input (pin 1) will enable the NM25C04M8. Also, a logic low placed on write enable (pin 12) will allow for the device to be accessed for writing or reading data.

The NM25C04M8 uses the 6-bit address from the address pins to select one of 64 addresses. The addresses are used to select individual data bytes. The memory can be written to or read from on the falling edge of the write enable signal. The device also features an internal write protect circuit to protect data integrity. The write protect function is enabled when the /WR_PROTECT input is held low.

The NM25C04M8 is suitable for use in many memory applications, including embedded systems and consumer products requiring high-density memory solutions. The device offers a combination of memory types with the flexibility and lower power consumption required by modern designs. The 6-bit address and write protect functions ensure data integrity and ease of operation. The NM25C04M8 is an ideal choice for many memory applications.

The specific data is subject to PDF, and the above content is for reference

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