NOJD157M006RWJ Capacitors |
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Allicdata Part #: | 478-1826-2-ND |
Manufacturer Part#: |
NOJD157M006RWJ |
Price: | $ 0.00 |
Product Category: | Capacitors |
Manufacturer: | AVX Corporation |
Short Description: | CAP NIOB OXI 150UF 20% 6.3V 2917 |
More Detail: | 150µF Niobium Oxide Capacitor 6.3V 2917 (7343 Metr... |
DataSheet: | NOJD157M006RWJ Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
Height - Seated (Max): | 0.122" (3.10mm) |
Features: | -- |
Operating Temperature: | -55°C ~ 105°C |
Supplier Device Package: | 2917 (7343 Metric) |
Size / Dimension: | 0.287" L x 0.169" W (7.30mm x 4.30mm) |
Series: | OxiCap® NOJ |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Capacitance: | 150µF |
Tolerance: | ±20% |
Voltage - Rated: | 6.3V |
ESR (Equivalent Series Resistance): | 400 mOhms |
Current - Leakage: | 18µA |
Dissipation Factor: | 6% |
Mounting Type: | Surface Mount |
Package / Case: | 2917 (7343 Metric) |
Manufacturer Size Code: | D |
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Niobium Oxide (Nb2O5) capacitors are an alternative technology for use in on-chip and off-chip applications. They are capacitors with a metal-oxide-semiconductor (MOS) structure that can be used in fast switching applications like active filters or voltage and temperature sensors, making them ideal for use in high frequency mobile and wireless communications systems.
The NOJD157M006RWJ capacitor is an example of a Niobium Oxide capacitor with a valence-bond (VB) structure, which allows it to have a higher dielectric constant than other capacitors. The capacitor has a capacitance of 6.0 pF and is available in an 0402 SMD package. This makes the NOJD157M006RWJ capacitor ideal for use in high-density, on-chip, or off-chip applications.
The working principle of the NOJD157M006RWJ capacitor is based on semiconductor doping. The capacitor consists of two layers of niobium oxide separated by a tunneling oxide layer. The niobium oxide layers are doped with dopants such as zinc, boron, silicon or germanium, which create an electric field between them. The electric field enables the capacitor to store charge on its surface.
In a normal MOS capacitor, the voltage applied across the capacitor causes an electric field that enables electrons to move between the metal and semiconductor layers. But, in a VB structure, the applied voltage does not just generate an electric field – it also creates a bond between the layers, which strengthens the electric field and thus increases the capacitance. This is what makes the NOJD157M006RWJ capacitor so efficient at handling high frequencies.
The NOJD157M006RWJ capacitor is also much quieter and more efficient than other capacitors as it has a smaller dielectric constant and much less leakage current when it is in operation. This makes it ideal for use in high frequency applications where noise is of particular concern.
The NOJD157M006RWJ capacitor is a great choice for use in a wide variety of applications including high frequency sensors, high frequency filters, and voltage and temperature sensors. Its ability to handle high frequencies and its small dielectric constant make it an ideal solution for applications where noise is of concern.
The NOJD157M006RWJ is an ideal choice for applications where high speed switching is needed due to its VB structure, which allows for higher dielectric constant, faster switching, and minimal leakage current. The capacitor is also highly reliable and can handle a wide range of temperatures and frequencies. This makes it a great choice for high frequency applications such as active filters, voltage, and temperature sensors.
The specific data is subject to PDF, and the above content is for reference
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