NOSV477M006R0075 Allicdata Electronics

NOSV477M006R0075 Capacitors

Allicdata Part #:

478-3253-2-ND

Manufacturer Part#:

NOSV477M006R0075

Price: $ 0.00
Product Category:

Capacitors

Manufacturer: AVX Corporation
Short Description: CAP NIOB OXI 470UF 20% 6.3V 2924
More Detail: 470µF Niobium Oxide Capacitor 6.3V 2924 (7361 Metr...
DataSheet: NOSV477M006R0075 datasheetNOSV477M006R0075 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Stock 1000Can Ship Immediately
Specifications
Series: OxiCap® NOS
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Capacitance: 470µF
Tolerance: ±20%
Voltage - Rated: 6.3V
ESR (Equivalent Series Resistance): 75 mOhms
Current - Leakage: 56.4µA
Dissipation Factor: 12%
Mounting Type: Surface Mount
Package / Case: 2924 (7361 Metric)
Manufacturer Size Code: V
Height - Seated (Max): 0.148" (3.75mm)
Features: Low ESR
Operating Temperature: -55°C ~ 125°C
Supplier Device Package: 2924 (7361 Metric)
Size / Dimension: 0.287" L x 0.240" W (7.30mm x 6.10mm)
Description

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Niobium oxide capacitors are widely used in electronic circuit designs, as they provide excellent dielectric properties with low leakage. The NOSV477M006R0075 capacitor is a niobium oxide capacitor, designed to operate in accordance with its specified maximum ratings. In this article, the application field and the working principles of this capacitor will be discussed in detail.

Niobium oxide capacitors are widely used in various applications, including in power conversion circuits, high-speed digital signal processing, and military and medical applications. They are also used to provide a stable voltage reference in power supplies, and to provide a stable signal path for the design of three-terminal references. Capacitation of the NOSV477M006R0075 device is achieved by using an oxide layer as the dielectric media, which is formed by oxidizing niobium metal to its oxide state at elevated temperatures. The resulting dielectric layer has a fixed capacitance that is determined by the area of the metal plate and the thickness of the oxide layer. The NOSV477M006R0075 device has a capacitance range of 0.1 to 1000 pF with an operating voltage range of 6 to 75 volts.

The working principle of the NOSV477M006R0075 capacitor is based on the electrical properties of the oxide layer, which forms the dielectric in the structure. When a voltage is applied to the oxide layer, an electric field will be created, causing electrons to become displaced from their original positions. This displacement of electrons creates a dipole moment, which causes an accumulation of charge on opposite sides of the oxide layer. This accumulation of charge causes the oxide layer to act as a capacitor, causing the charge carriers (electrons and ions) to move back and forth, creating a potential difference across the NOSV477M006R0075 capacitor. This potential difference is used to store energy, which can be used to supply current to electronic circuits. The capacitance of the NOSV477M006R0075 device is determined by the thickness and area of the oxide layer, which are selected to meet the desired capacitance range for the designed application.

The NOSV477M006R0075 capacitor is used in a range of applications due to its excellent dielectric properties and low leakage current. It is capable of providing stable voltage references in power supplies, providing an ideal level of protection for digital signal processing, and providing stable signal paths for the design of three-terminal reference circuits. The capacitance range of the device allows for flexibility in the design of circuits, offering a wide range of applications. Additionally, the device is capable of handling a wide voltage range, allowing for a range of designs with different operating voltages.

In conclusion, the NOSV477M006R0075 niobium oxide capacitor is a highly versatile device designed to meet a range of applications with excellent dielectric properties and low leakage current. It has a wide range of capacitance values, enabling it to be used in a variety of circuit designs. Its working principle is based on the electrical properties of the oxide layer, which is formed by oxidizing niobium metal to its oxide state. This layer acts as a capacitor when subjected to a voltage, accumulating a charge and creating a potential difference across the device. This potential difference can then be used to store energy, allowing the device to provide current to electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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