NP3100SCMCT3G Circuit Protection

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
Voltage - Breakover:	350V
Voltage - Off State:	275V
Voltage - On State:	4V
Current - Peak Pulse (8/20µs):	400A
Current - Peak Pulse (10/1000µs):	100A
Current - Hold (Ih):	150mA
Number of Elements:	1
Capacitance:	33pF
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB

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Thyristors - NP3100SCMCT3G Application Field and Working Principle

Thyristors are electronic components with four layers of alternate P-type and N-type semiconductor material, known as thyristors. They are unidirectional semiconductor switches whose behavior is similar to a mechanical switch. Thyristors are widely used for power control, switching and protection. The NP3100SCMCT3G series is a type of thyristor that can be used for commercial and industrial applications.The NP3100SCMCT3G series is typically used for motor control, power control, and load switching applications. This device is designed to be a fast switching device with a wide variation of ratings and pulse currents. These devices can be used in a wide range of voltage, amperage, and temperature ratings. The device is also designed to be rugged and reliable with a long life.The NP3100SCMCT3G series thyristor is designed to be bidirectional DC switches. This means that it can be used for both forward and reverse voltage direction. This device has two semiconductor layers separated by a reverse biased PN junction. When forward bias voltage is applied, the PN junction turns on and the device will conduct current. Conversely, when reverse bias voltage is applied, the PN junction turns off and the device will not conduct current.The working principle of the NP3100SCMCT3G thyristor is based on the four layer P-N-P-N structure. This structure is made of alternating N-type and P-type material. A reverse bias voltage is applied to the structure which causes electrons in the N-type material to be attracted to the P-type material forming a depletion layer at the PN junction. This depletion layer is called the gate.When a forward bias voltage is applied to the gate, it forces current to flow from the N to P layer, turning the thyristor on. When its trigger voltage is removed, the thyristor will remain in the ON state and current will continue to flow through it until the voltage is reversed below the holding voltage and the transistor will shut off.In summary, the NP3100SCMCT3G thyristor is a cost effective power control solution for many commercial and industrial applications. It is capable of fast switching and is designed to be rugged and reliable with long life. The device’s four layer P-N-P-N structure allows it to be used in both forward and reverse directions and its working principle allows it to be triggered and shut off smoothly.

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