Allicdata Part #: | 557-1556-ND |
Manufacturer Part#: |
NP5Q128A13ESFC0E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC PCM 128M SPI 66MHZ 16SO W |
More Detail: | PCM (PRAM) Memory IC 128Mb (16M x 8) SPI 66MHz 360... |
DataSheet: | NP5Q128A13ESFC0E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 350µs |
Base Part Number: | NP5Q128A |
Supplier Device Package: | 16-SO W |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Memory Interface: | SPI |
Access Time: | 360µs |
Series: | Omneo™ |
Clock Frequency: | 66MHz |
Memory Size: | 128Mb (16M x 8) |
Technology: | PCM (PRAM) |
Memory Format: | PCM (PRAM) |
Memory Type: | Non-Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
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NP5Q128A13ESFC0E is a non-volatile, double data rate, Quad Serial Peripheral Interface (QSPI) NOR Flash memory device which provides a storage of 128 Mbits of data, organized in 262,144 bytes. This device is categorized in memory and has numerous applications which are used in industrial, automobile and consumer electronics. This device has been designed using 55nm NOR Flash process technology which provides it with high-speed data transfer operations and advanced reliable read and write operations.
Features
- Uniform 512-byte sector organization
- Dual I/O, Quad I/O and Octal DTR/DDRDTR.
- ReadID and Volatile/Nonvolatile configuration registers.
- Status register.
- Serial NOR Flash Memory (SPI Flash).
- Low power consumption.
- High speed data rate.
- High speed single I/O.
- Wear leveling algorithm.
- Advanced reliable read and write operations.
- Supports x4, x8, x16 DDR Protocols.
- Error correction.
- High security.
- Automatic sleep mode.
Applications
NP5Q128A13ESFC0E provides high speed data transfer operations and advanced reliable read and write operations and is therefore has been utilized in a variety of application such as industrial control, servers, mobile phones, tablets and PCs, consumer electronics products such as digital cameras, digital video cameras, camcorders, digital music players, electronic toys, as well as automotive and medical applications.
Working Principle
NP5Q128A13ESFC0E is a flash memory device, operating on the principle of writing and erasing the memory cells. It consists of the array of the cells which are written with the help of a Write Cycle. During the write cycle, the voltage is applied to the Flash cell and is then reduced, allowing current to flow and causing electrons to move from a low charge state to a higher charge state. Thus, the data is written into the memory cell. On the other hand, during erasing, the voltage is increased and then decreased, causing the electrons to move from a high to low state, thus erasing the data. Data is stored in the memory cells until they are erased by the user.
NP5Q128A13ESFC0E also consists of an SPI (Serial Peripheral Interface) that is used for communication between the device and the host controller. The SPI has two different communication channels; 8-bit Command/Address bus and 16-bit data bus, which allows for faster communication. The host controller sends various instructions to the device for writing, erasing and reading data. The host controller also communicates with the memory cells to read or write data from or to them.
Conclusion
NP5Q128A13ESFC0E is one of the most advanced memories available in the market, offering superior performance, reliability, and security. It is widely used in various applications due to its features and specifications, including industrial, medical, and automobile electronics. Its working principle revolves around the write/erase cycle and the SPI communication interface, which aid in the transfer of data and information between the device and host.
The specific data is subject to PDF, and the above content is for reference
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