Allicdata Part #: | NP8P128AE3T1760E-ND |
Manufacturer Part#: |
NP8P128AE3T1760E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC PCM 128M PARALLEL 64EASYBGA |
More Detail: | PCM (PRAM) Memory IC 128Mb (16M x 8) Parallel, SPI... |
DataSheet: | NP8P128AE3T1760E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Omneo™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | PCM (PRAM) |
Technology: | PCM (PRAM) |
Memory Size: | 128Mb (16M x 8) |
Write Cycle Time - Word, Page: | 135ns |
Access Time: | 135ns |
Memory Interface: | Parallel, SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 64-TBGA |
Supplier Device Package: | 64-EasyBGA (8x10) |
Base Part Number: | NP8P128A |
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NP8P128AE3T1760E is a type of memory device. It usually stores data and instructions for a computer, and is important for the computer to process information correctly. This memory device works by storing data in a non-volatile fashion, meaning that it maintains the data stored even when the machine is switched off.
The NP8P128AE3T1760E is a high performance, low-power NOR Flash solution that is tailored for embedded applications. This memory device delivers the industry’s highest capacity at up to 16 Gbit. The distinctive feature of this memory device is its very quick erase and write speeds, as well as its ability to support multiple operating frequencies.
This memory device has a wide range of applications, including data storage, code storage, and device configuration. Some of the specific applications suitable for this memory device include mobile devices, consumer electronics, automotive systems, industrial automation, and healthcare products.
In terms of working principle, the NP8P128AE3T1760E is built to store data in a series of cells. Each cell is composed of two transistors, an access transistor and a tunneling transistor. The access transistor allows reads and writes to the cells while the tunneling transistor ensures that writes are non-volatile. This means that the data stored in the cells will remain even if the power to the device is cut off.
The NP8P128AE3T1760E is also equipped with a number of advanced read, write, and erase modes. These include Page Read Mode that allows up to 32-bit access, Quad-SPI Mode for high speed parallel operations, Dual-SPI Mode for better compatibility, and Quad I/O Mode for higher performance. Additionally, this memory device is equipped with a special Power-Loss Protection mode which allows data to be saved even if the power to the device is cut unexpectedly.
In conclusion, the NP8P128AE3T1760E is a versatile memory device with a wide range of applications. It is capable of reading and writing data quickly and is able to maintain data even when the power to the device is cut off. It is used for a variety of embedded applications, including mobile devices, consumer electronics, automotive systems, industrial automation, and healthcare products.
The specific data is subject to PDF, and the above content is for reference
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