NP8P128AE3T1760E Allicdata Electronics
Allicdata Part #:

NP8P128AE3T1760E-ND

Manufacturer Part#:

NP8P128AE3T1760E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PCM 128M PARALLEL 64EASYBGA
More Detail: PCM (PRAM) Memory IC 128Mb (16M x 8) Parallel, SPI...
DataSheet: NP8P128AE3T1760E datasheetNP8P128AE3T1760E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Omneo™
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: PCM (PRAM)
Technology: PCM (PRAM)
Memory Size: 128Mb (16M x 8)
Write Cycle Time - Word, Page: 135ns
Access Time: 135ns
Memory Interface: Parallel, SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (8x10)
Base Part Number: NP8P128A
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NP8P128AE3T1760E is a type of memory device. It usually stores data and instructions for a computer, and is important for the computer to process information correctly. This memory device works by storing data in a non-volatile fashion, meaning that it maintains the data stored even when the machine is switched off.

The NP8P128AE3T1760E is a high performance, low-power NOR Flash solution that is tailored for embedded applications. This memory device delivers the industry’s highest capacity at up to 16 Gbit. The distinctive feature of this memory device is its very quick erase and write speeds, as well as its ability to support multiple operating frequencies.

This memory device has a wide range of applications, including data storage, code storage, and device configuration. Some of the specific applications suitable for this memory device include mobile devices, consumer electronics, automotive systems, industrial automation, and healthcare products.

In terms of working principle, the NP8P128AE3T1760E is built to store data in a series of cells. Each cell is composed of two transistors, an access transistor and a tunneling transistor. The access transistor allows reads and writes to the cells while the tunneling transistor ensures that writes are non-volatile. This means that the data stored in the cells will remain even if the power to the device is cut off.

The NP8P128AE3T1760E is also equipped with a number of advanced read, write, and erase modes. These include Page Read Mode that allows up to 32-bit access, Quad-SPI Mode for high speed parallel operations, Dual-SPI Mode for better compatibility, and Quad I/O Mode for higher performance. Additionally, this memory device is equipped with a special Power-Loss Protection mode which allows data to be saved even if the power to the device is cut unexpectedly.

In conclusion, the NP8P128AE3T1760E is a versatile memory device with a wide range of applications. It is capable of reading and writing data quickly and is able to maintain data even when the power to the device is cut off. It is used for a variety of embedded applications, including mobile devices, consumer electronics, automotive systems, industrial automation, and healthcare products.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "NP8P" Included word is 8
Part Number Manufacturer Price Quantity Description
NP8P128A13BSM60E Micron Techn... 0.0 $ 1000 IC PCM 128M PARALLEL 56TS...
NP8P128A13TSM60E Micron Techn... 0.0 $ 1000 IC PCM 128M PARALLEL 56TS...
NP8P128A13B1760E Micron Techn... 0.0 $ 1000 IC PCM 128M PARALLEL 64EA...
NP8P128A13T1760E Micron Techn... 0.0 $ 1000 IC PCM 128M PARALLEL 64EA...
NP8P128AE3BSM60E Micron Techn... 0.0 $ 1000 IC PCM 128M PARALLEL 56TS...
NP8P128AE3TSM60E Micron Techn... 0.0 $ 1000 IC PCM 128M PARALLEL 56TS...
NP8P128AE3B1760E Micron Techn... 0.0 $ 1000 IC PCM 128M PARALLEL 64EA...
NP8P128AE3T1760E Micron Techn... 0.0 $ 1000 IC PCM 128M PARALLEL 64EA...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics