NSVF4020SG4T1G Allicdata Electronics

NSVF4020SG4T1G Discrete Semiconductor Products

Allicdata Part #:

NSVF4020SG4T1GOSTR-ND

Manufacturer Part#:

NSVF4020SG4T1G

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: RF TRANSISTOR
More Detail: RF Transistor NPN 8V 150mA 16GHz 400mW Surface Mou...
DataSheet: NSVF4020SG4T1G datasheetNSVF4020SG4T1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.13703
6000 +: $ 0.12758
15000 +: $ 0.12285
30000 +: $ 0.11813
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 17.5dB
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: SC-82FL/MCPH4
Description

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NSVF4020SG4T1G Application Field and Working Principle

A NSVF4020SG4T1G is a bipolar junction transistor (BJT) which is used in radio frequency (RF) applications. This type of transistor is used in many consumer products, such as radios, televisions, mobile phones, consumer electronics, and other applications that require high frequency, high power operation. The main purpose of the device is to amplify signals in the RF range.

The construction of the NSVF4020SG4T1G is an NPN type bipolar junction transistor, with a V CE of 0.85V. It has an emitter area of 0.25 sq.mm, and a collector area of 0.5 sq.mm, with a gain band width of 37MHz-375MHz and a typical noise figure of 0.6dB. It is packaged in a surface mount package, which makes it suitable for modern and high density applications.

The working principle of the NSVF4020SG4T1G is based on the fact that bipolar junction transistors are made up of two p-n junctions. In NPN transistors, current flows from the collector to the emitter when base voltage is applied. This current is further amplified by the multiplication of the base-emitter and collector-emitter junction built in the transistor structure. As a result, the base current is amplified in the transistor.

The NSVF4020SG4T1G is also equipped with an external bias circuit for more accurate operation. This external bias circuit regulates the collector to emitter voltage and controls the operating temperature of the device. The external bias circuit also serves to improve the device\'s reliabilty and linearity.

This type of transistor has several advantages over other BJTs, such as its wide frequency range, its low noise figure, and its ability to handle large signal amplitudes. It also has a very good linearity and high input impedance. Furthermore, it is suitable for a wide range of input voltages and output currents. All these features make it perfect for radio frequency applications.

The NSVF4020SG4T1G has a wide range of usage. It can be used in applications such as receivers, transmitters, amplifiers, oscillators, and modulators. It can also be used in the control of motor speed and in the control of lighting or other consumer electronics. It is even suitable for use in extreme environments, such as high temperature and high vibration environments.

In conclusion, the NSVF4020SG4T1G is a great option for RF applications. It is a cost effective, rugged, and reliable device, with wide frequency range and low noise figure, making it the ideal choice for high frequency applications. Its features enable high power and high linearity, making it suitable for many consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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