P4KE10A B0G Allicdata Electronics

P4KE10A B0G Circuit Protection

Allicdata Part #:

P4KE10AB0G-ND

Manufacturer Part#:

P4KE10A B0G

Price: $ 0.04
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TVS DIODE 8.55V 14.5V DO204AL
More Detail: N/A
DataSheet: P4KE10A B0G datasheetP4KE10A B0G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.03874
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Voltage - Clamping (Max) @ Ipp: 14.5V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 29A
Series: P4KE
Voltage - Breakdown (Min): 9.5V
Voltage - Reverse Standoff (Typ): 8.55V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes, also known as transient voltage suppression diodes, are discrete semiconductor devices designed to protect voltage sensitive elements from high-voltage transients. These transients can occur naturally as part of inherent mains voltage fluctuations, or they may be generated by a nearby electrical fault such as an arc or a short circuit. In such situations, the transient voltage can exceed a voltage rating of sensitive components and cause serious damage. A TVS diode can provide much needed protection.

The P4KE10A B0G TVS diode is designed to protect against high-voltage transients. It is rated for peak power dissipation of 38 watts or repetitive peak power dissipation of 28 watts. The P4KE10A B0G diode can handle transients with peak amplitude up to 6.5kV and can dissipate power up to 50A if operational avalanche breakdown voltage is sufficiently low. This diode features a built-in ESD charge pump structure, which allows it to provide reliable performance and high peak power dissipation.

The P4KE10A B0G diode is a bi-directional device, with a breakdown voltage of 12V. Its non-linear capacitance is designed to improve its transient response performance and withstand high surge current levels. The P4KE10A B0G is also suitable for a wide range of applications such as automotive electronics, telecommunications, industrial control systems, and consumer electronics. It is also suitable for use in areas where high voltage transients need to be monitored.

The working principle of a P4KE10A B0G is as follows. When a fast, high-voltage transient voltage is applied, the diode enters its reverse breakdown region and begins to conduct current. This current is limited by the P4KE10A B0G\'s internal structure, including its ESD charge pump. As the current starts to flow, the junction capacitance of the diode is depleted, bringing the voltage of the diode close to that of the transient voltage, and clamping it to the maximum diode breakdown voltage. As a result, the voltage across the protected circuit is limited to a safe level, and the circuit is prevented from being damaged.

The P4KE10A B0G TVS diode is a versatile device that can offer reliable protection against high-voltage transients. It is suitable for a wide range of applications, and its built-in ESD charge pump structure allows it to handle large surge currents. Its fast transient response time and low capacitance make it ideal for applications where fast reaction times and protection against fault currents are essential.

The specific data is subject to PDF, and the above content is for reference

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