Allicdata Part #: | P4KE160HE3/73-ND |
Manufacturer Part#: |
P4KE160HE3/73 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 130V 230V DO204AL |
More Detail: | N/A |
DataSheet: | P4KE160HE3/73 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Specifications
Current - Peak Pulse (10/1000µs): | 1.7A |
Base Part Number: | P4KE |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Series: | Automotive, AEC-Q101, TransZorb® |
Voltage - Clamping (Max) @ Ipp: | 230V |
Voltage - Breakdown (Min): | 144V |
Voltage - Reverse Standoff (Typ): | 130V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Box (TB) |
Description
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TVS Diodes are devices used to protect electrical systems and components from excessive electrical surges or shorts. P4KE160HE3/73 is a type of TVS diode specifically designed to protect consumer electronics, electrical and communications equipment, operating systems, and other critical circuits from overvoltage and electrostatic discharge (ESD) events.The P4KE160HE3/73 diode has a unidirectional mode of operation and is designed to protect against overvoltages up to 160 volts. It is composed of two parts; a diffused junction and an avalanche breakdown element, which work together to ensure maximum protection from electrical surges. The diffused junction has a negative threshold voltage, and when an external voltage exceeds this threshold the junction starts to conduct and current is diverted through it. This prevents current flow to the downstream circuit and therefore the overvoltage is prevented from damaging sensitive components.The avalanche breakdown element in the P4KE160HE3/73 is used to protect against transient spikes. The basic working principle involves avalanche multiplication of minority carriers by applying an electrical field to the junction. When the voltage across the junction increases, a certain point is reached where electrons gain enough kinetic energy to cause an avalanche breakdown. That is, electron-hole pairs are created so quickly that it causes a spontaneous increase in current. This sudden dissipates excessive voltage of the surge and thus protects the downstream circuit.Furthermore, the P4KE160HE3/73 diode provides good protection against electrostatic discharge (ESD). ESD events are caused by sudden but prolonged electrical discharges between two surfaces and can damage electrical components and systems. The P4KE160HE3/73 diode is designed to absorb these discharges and dissipate them safely, thereby protecting electronics from harm.The P4KE160HE3/73 diode is a reliable TVS diode suitable for a wide range of consumer electronics and operation systems. Due to its high-voltage threshold, it can effectively protect circuits against excessive ESD and electrical surge events. It is also cost-effective, easy to use, and offers excellent protection from electrical damage.The specific data is subject to PDF, and the above content is for reference
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