P4KE170A-G Allicdata Electronics

P4KE170A-G Circuit Protection

Allicdata Part #:

P4KE170A-G-ND

Manufacturer Part#:

P4KE170A-G

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Comchip Technology
Short Description: TVS DIODE 145V 234V DO41
More Detail: N/A
DataSheet: P4KE170A-G datasheetP4KE170A-G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
5000 +: $ 0.05955
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Voltage - Clamping (Max) @ Ipp: 234V
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 1.71A
Series: --
Voltage - Breakdown (Min): 161.5V
Voltage - Reverse Standoff (Typ): 145V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diode is a commonly used form of transient voltage suppressor (TVS). Its purpose is to protect sensitive electronic components from overvoltages caused by electrostatic discharge (ESD). It meets the International EMC (Electromagnetic Compatibility) standard, and is widely used in automotive, industrial, consumer, communications and military applications. The P4KE170A-G is an ultra-fast, small body TVS diode that has a transient peak pulse power dissipation rate of 33A.

The P4KE170A-G has a maximum peak pulse power dissipation of 170W when at a 25°C ambient temperature. It also has a dynamic capacitance of 6 between 50V and 5V at a temperature of 25°C, providing a very low capacitance for long term reliability. This diode is suitable for protection against electrostatic discharge pulses of up to 8 kV on the personside.

The P4KE170A-G operates through the principle of avalanche junction breakdown. This breakdown process works by the application of a voltage being applied to the junction of the diode. The voltage will increase until the current in the junction reaches the critical level required for the avalanche breakdown of the junction. This can cause a very large increase of current which the diode can absorb. The higher the voltage, the higher the current, and the higher the power dissipation.

The P4KE170A-G is used primarily in automotive, industrial, and military applications where ESD protection and high power dissipation is necessary. It can be used on industries like Automotive Audio Electronics, Industrial Control Systems, Wireless Communications, and Power Line Communications. It is also suitable for applications such as LED driver protection and voltage clamping. The P4KE170A-G is rated for up to 200V of peak pulse power dissipation and works best under 25°C temperature conditions.

The P4KE170A-G is designed with an internal zinc oxide varister, which provides excellent protection against transient voltages. The internal protection provides ESD protection up to a level of 8 kV on the personside. The varister also has a high surge handling capability and can suppress any potential voltage spikes with very good efficiency. This makes it ideal for high power applications where protection against transient voltage spikes is necessary.

The P4KE170A-G is an ultra-fast, low capacitance TVS diode that is widely used in a variety of automotive, industrial, and military applications. The diode is designed to protect sensitive electronic components from overvoltages caused by electrostatic discharge (ESD) and peak pulse power rates of up to 33A. The internal zinc oxide varister provides excellent protection against transient voltages and the diode is rated for up to 200V peak pulse power. This makes the P4KE170A-G an excellent choice for high power applications where fast ESD protection and voltage clamping is necessary.

The specific data is subject to PDF, and the above content is for reference

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