P4KE75CHE3/54

Current - Peak Pulse (10/1000µs):	3.7A
Base Part Number:	P4KE
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	400W
Series:	Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp:	108V
Voltage - Breakdown (Min):	67.5V
Voltage - Reverse Standoff (Typ):	60.7V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS (Transient Voltage Suppressor) diodes acts as a high speed device which is highly useful for lightning and surge protection. The popular P4KE75CHE3/54 is one such device which is part of the TVS diode family. This article discusses this device\'s application field and its working principle.The P4KE75CHE3/54 is an uni-directional TVS diode designed specifically for over-voltage protection and clamping applications. It mainly works by clamping the voltage peak of transients, when the incoming pulse is higher than a specific peak value. The device itself can support a peak pulse voltage up to 750V and a steady state reverse working voltage of 400 Volts. The device\'s typical breakdown voltage is also around 500V.This device can be employed in a wide range of applications. It can be used in automotive, consumer applications, telecom applications, computer peripheral circuits and power supply circuits. The P4KE75CHE3/54 is preffered over gas surge suppressors as it has a better response time which protects the device and other system components from damaging ESD and lightning strikes.The TVS diode working principle is based on the Avalanche break-down principle. The device has a special structure which incorporates a multi-layered pn-junction diode and high doping concentration of both p-type and n-type layers. As the voltage applied to the diode increases, the junction creates a potential barrier, which increases with the applied voltage. If the applied voltage exceeds the breakdown voltage, an avalanche breakdown occurs. This breakdown effect creates multiple charge carriers and reduces the potential barrier, thus allowing the current to flow.The P4KE75CHE3/54 is also available with a Passivated terminal surface finish (P4K MPN). This terminal surface offers improved mechanical contact which allows for higher efficiency in dissipating the energy generated by the surge event. This is especially useful for high energy applications such as ESD or Lightning strikes.The P4KE75CHE3/54 is also designed to have a higher thermal resistance and a high thermal capacity thus reducing heat damage during surge events. The device also features a low reverse-leakage current thus guaranteeing a longer cable life, reduced interference and fewer electromagnetic emissions.In conclusion, the P4KE75CHE3/54 is an efficient device which can be used in different applications where surge protection is of paramount importance. Its work principle is based on the avalanche breakdown principle and it also features a Passivated terminal surface finish and higher thermal resistance. This provides an improved efficiency in dissipating energy generated by the surge event. All these features make the P4KE75CHE3/54 an ideal device for over-voltage protection and clamping applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description