P5103UARP Circuit Protection

Series:	SIDACtor®
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
Voltage - Breakover:	600V
Voltage - Off State:	420V
Voltage - On State:	8V
Current - Peak Pulse (8/20µs):	150A
Current - Peak Pulse (10/1000µs):	45A
Current - Hold (Ih):	150mA
Number of Elements:	3
Capacitance:	40pF, 60pF
Mounting Type:	Surface Mount
Package / Case:	6-SMD, Gull Wing

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Thyristors, often referred to as Silicon Controlled Rectifiers (SCR), are semiconductor devices used in power electronics applications. They consist of four layer devices with the ability to both switch and control power currents. The P5103UARP is a Silicon Avalanche Diode Thyristor that finds application in high temperature and high voltage switching applications. This device can be used to switch any DC voltage up to 1000V and has a resistance temperature coefficient of -0.003Ω/℃.

The working principle of a Thyristor is based on four layers of ‘PNJ’ semiconductor material, taking the form of an interlocking PNPN structure. Each of the four layers consists of an alternating p and n doped semiconductor material, with the four junctions formed by the PN junctions and the dielectric between them. When the device is forward biased with the gate, the first and second junctions become forward biased, allowing the current to flow through the device. When the current across the device reaches the breakover value, the diode is switched ‘on’ and the current is maintained until the current drops below the ‘hold’ value.

The P5103UARP is an avalanche diode thyristor that utilizes a custom high power silicon process. This device is an ultrafast and economically priced thyristor solution for use in high temperature and high voltage switching applications. The P5103UARP is suitable for use in applications such as power supply and motor control, solar cell controllers, and energy management. This device features an ultrafast switching response time of only 5 ns and is capable of interrupting an AC line even when subjected to overvoltages of up to 1000V. Additionally, this device has a holding current as low as 0.4 A, minimizing power consumption and helping to reduce the system costs.

The P5103UARP is designed to be mounted onto ceramic substrates, which offer improved heat dissipation and higher switching capability. This feature allows the P5103UARP to operate at peak performance even in the most challenging temperature environments. The ceramic substrate also provides a high electrical breakdown voltage of up to 1000V. Additionally, this device features a breakdown voltage temperature coefficient of -0.25 mV/K which ensures that the device is capable of handling high voltages at elevated temperatures.

The P5103UARP is an ultrafast and economical solution for high temperature high voltage switching applications. This device features an ultrafast response time of 5 ns and an operating temperature range of -40 to +125°C. The P5103UARP can handle an AC line subject to overvoltages up to 1000V and offers additional features such as a low on-state voltage of 0.4V and a low holding current of 0.4 A. Furthermore, the device has an operating power dissipation of 1.25 W and a ceramic substrate providing a high electrical breakdown voltage. These features combine to make the P5103UARP an ideal solution for use in power supplies, motor control, solar cell controllers, and energy management applications.

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