P6KE12ARL Circuit Protection

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TVS - Diodes are a semiconductor device designed to protect electrical equipment from voltage transients induced by electrical operators or unpredictable events. The P6KE12ARL is an unidirectional circuit protection component designed by ON Semiconductor that provides a type of Transient Voltage Suppression (TVS), such as ESD, EFT, surge and lightning protection.

The P6KE12ARL application field is mainly divided into three areas: automotive, industrial and consumer electronics.

The automotive application is highly valued, as most automotive systems are exposed to external damage due to the harsh vehicular environment. In addition, the P6KE12ARL also provides excellent protection for automotive electronic controllers and electronic systems, drivers, information transmission, and sensing. It is able to protect against failure caused by voltage transients induced by electrical operators or unpredictable events such as electrostatic discharge (ESD) or electromagnetic interference (EMI).

The industrial applications of the P6KE12ARL include data lines for computers and workstations, cable television and satellite systems, telecommunications equipment and process control systems. For these applications, this device offers optimal protection against lightning and ESD.

In consumer electronic devices, the P6KE12ARL can be used to protect from electrostatic discharge, electrostatic induction and surges of transients in consumer electronics. It can also be used to protect audio/video equipment from power supply transients as well as EMI.

Fig. 1 shows the I-V characteristics of the P6KE12ARL.

Figure 1: I-V Characteristic of the P6KE12ARL
The P6KE12ARL consists of an isolation barrier between two sections of the diode, the PN junction of the lower section acting as a Zener diode to protect devices from high ESD voltages and the silicon avalanche diode on the upper section to protect against lightning surges.

When a transient surge or voltage spike is applied on the diode, the junction of the lower section acts as a Zener diode and limits the overvoltage sign by creating a low resistance path for the high current to flow which is also known as “avalanche breakdown”. This breakdown is created due to the high electric field within the junction. The junction becomes discharged and the devices are safely protected from the overvoltage.

The upper section of the diode contains a metal semiconductor junction (MIS), which is composed of a highly doped N-type silicon substrate and a heavily doped P-type epitaxial layer, which are separated by a thin film of oxide. When the voltage across the MIS is increased to the threshold voltage, the channel of the device will break down, resulting in the protection of the devices against extreme surge voltages.

The P6KE12ARL is a versatile TVS device, which is suitable for a variety of applications. It is designed to offer excellent protection from ESD, EFT, surge and lightning induced transients in automotive, industrial, and consumer electronics.

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