P6KE16 Allicdata Electronics

P6KE16 Circuit Protection

Allicdata Part #:

P6KE16-ND

Manufacturer Part#:

P6KE16

Price: $ 0.10
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 13.6V 23.63V DO204AC
More Detail: N/A
DataSheet: P6KE16 datasheetP6KE16 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
4000 +: $ 0.08514
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Voltage - Clamping (Max) @ Ipp: 23.63V
Supplier Device Package: DO-204AC (DO-15)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): --
Series: P6KE
Voltage - Breakdown (Min): 14.4V
Voltage - Reverse Standoff (Typ): 13.6V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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P6KE16 Application Field and Working Principle

P6KE16 diodes are Transient Voltage Suppression (TVS) diodes with unidirectional and bidirectional polarities, based upon Silicon Avalanche Diodes (SAD). They are widely used for providing immunity to electrostatic discharges and lightning strikes in the field of microelectronics, telecommunications and, computer and automotive electronics.

Their application field generally involves use in consumer products such as digital products, mobile phones, cameras, components, industrial equipment, automobiles, and integrated circuits.

Working Principle of P6KE16 Diode

The P6KE16 diode is based on Silicon Avalanche Diodes (SAD). SADs are diodes which conduct a large avalanche current when a threshold voltage VBR is reached. When the reverse bias increases on the diode, the electrical field in the depletion region increases. The free electrons start to gain energies after they collide with the atoms in the depletion region.

When the electric field exceeds a certain value (Critical Field strength), the electrons gain so much kinetic energy that they produce additional electrons by collisions with atoms in the silicon lattice and these electrons in turn, liberate more electrons, creating an avalanche or a chain reaction. The avalanche multiplication of the carriers is called impact ionization. The current which is produced due to impact ionization is called the avalanche current or the breakdown current.

This breakdown current increases exponentially with the increase in applied voltage, thus limiting the peak reverse voltage applied to the diode. The P6KE16 diode has a reverse break-over voltage of 16V, which means that the diode starts conducting the current in the reverse direction when the applied voltage exceeds 16V. In other words, P6KE16 diode limits the peak reverse voltage applied to 16V.

Features and Benefits

The P6KE16 can withstand peak voltages up to 16V. The device has a wide operating temperature range of -55 to 150 °C. They are voltage insensitive, allowing them to be used with any common signal voltage. They have a low nominal capacitance and low leakage currents. They are also fairly easy to mount with standard miniature components.

The P6KE16 diodes provide excellent protection against transients, eliminating the need for multiple devices. The wide operating temperature range makes the device suitable for use in industrial applications. Additionally, the inclusion of P6KE16 in a system reduces the power consumption in the device, and it increases the reliability of the system.

Conclusion

P6KE16 are TVS diodes used for providing immunity to electrostatic discharges and lightning strikes in microelectronics, telecommunications, computer, and automotive electronics. They are based upon Silicon Avalanche Diodes (SAD) and provide a peak voltage of 16V. It has a wide operating temperature range of -55 to 150 °C and is voltage insensitive. P6KE16 also has low nominal capacitance and low leakage currents.

The specific data is subject to PDF, and the above content is for reference

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