P6SMB30A Allicdata Electronics
Allicdata Part #:

P6SMB30ALFTR-ND

Manufacturer Part#:

P6SMB30A

Price: $ 0.11
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 25.6V 41.4V DO214AA
More Detail: N/A
DataSheet: P6SMB30A datasheetP6SMB30A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.11000
10 +: $ 0.10670
100 +: $ 0.10450
1000 +: $ 0.10230
10000 +: $ 0.09900
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Voltage - Clamping (Max) @ Ipp: 41.4V
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 14.7A
Series: P6SMB
Voltage - Breakdown (Min): 28.5V
Voltage - Reverse Standoff (Typ): 25.6V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppression) diodes are components designed to protect electrical components from voltage fluctuations or transients. They are used in consumer electronics, computers, telecommunications, and industrial devices. The P6SMB30A is a unidirectional TVS diode manufactured by STMicroelectronics. It is designed for use in applications requiring protection from high-energy transients, such as fast-rise high-voltage surges found on data lines.

The P6SMB30A diode has a VBR rated at 30V and a maximum peak pulse power of 600W. The low peak working voltage of the device makes it suitable for use in data transmission lines and signal lines which are subject to high-energy spikes. It also has a very low clamping voltage, making it suitable for use in low-voltage applications. The device is built with in-line leads with a total length of 4.09mm. It is constructed with a surface-mount package and a 5mm x 16.9mm footprint.

The P6SMB30A uses a bidirectional silicon thyristor configured in a reverse-blocking mode. It is designed to dissipate the energy created by an over-voltage transient. This is accomplished by introducing a high voltage across the diode in the reverse direction, opening up the reverse conducting path and dissipating the energy as heat. The device is also designed to protect from damage due to electrostatic discharge (ESD) by diverting the transient energy away from sensitive circuit components.

The P6SMB30A also utilizes the SILASTIC semiconductor process for improved reliability. This advanced process experimentally improves the dielectric strength of the device and minimizes the risk of arcing. This not only increases the device\'s survivability, but also enhances its lifetime reliability.

The P6SMB30A is an ideal device for use in a wide range of applications, such as telecommunications, consumer electronics, computers, and industrial equipment. It provides reliable protection from over-voltage transients and ESD, with superior reliability thanks to the SILASTIC semiconductor process. The device is easy to install, with a compact package size, and has a low clamping voltage, making it suitable for use in low-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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