PBRN113ET,215

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Introduction

PBRN113ET,215 is a single pre-biased, three-terminal bipolar junction transistor (BJT). It is designed as a low-power switching device, suitable for use in all kinds of application fields. It has a pre-biased structure, meaning that the base current has been pre-set, which simplifies the design and operation of the device, as well as improving its performance.

External Characteristics

PBRN113ET,215 has a current gain of 12, a wide operating temperature ranging from -55°C to +150°C, a peak collector current of 2.5A, and a maximum collector-emitter voltage of 100V. Furthermore, the maximum junction temperature for it is 150°C. Additionally, it is compatible with a wide range of frequency, from 10 to 300MHz.

Application fields

The PBRN113ET,215 can be used as a power transistor switch in a variety of application fields. As its pre-biased structure allows for a simplified design and operation, it is suitable for use in low-power switching, such as in actuator systems, relays and Solenoids, DC motor control, and temperature control. It is also used in low-power digital circuits, such as in logic gates, flip-flops, and digital-to-analog converters.

In addition, PBRN113ET,215 can be used in modulators and detectors, as well as in high-frequency signal amplifiers.

Working Principle

The working principle of the PBRN113ET,215 is the same as that of any other bipolar junction transistor. It consists of three terminals, the base, collector, and emitter, and works according to the junction between them. The base terminal controls the current flow between the collector and emitter, by controlling the flow of electrons from the base to the collector, it amplifies the current flow from the emitter.

In addition, due to its pre-biased structure, its base current has already been preset, and it can be used as a switch without having to adjust the base current externally. This simplifies the operation of the device, and allows the operating current to be kept consistent.

Conclusion

PBRN113ET,215 is a single pre-biased bipolar junction transistor designed for low-power switching. It has a wide operating temperature range, and a suitable current gain. Its pre-biased structure allows for a simplified design and operation, making it suitable for many applications. The device can be used in a variety of fields, such as actuator systems, relays and Solenoid, DC motor control, temperature control, logic gates, modulators and detectors, and high-frequency signal amplifiers.

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