PBRP113ET,215 Allicdata Electronics
Allicdata Part #:

1727-5712-2-ND

Manufacturer Part#:

PBRP113ET,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PBRP113ET,215 datasheetPBRP113ET,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03804
6000 +: $ 0.03308
15000 +: $ 0.02812
30000 +: $ 0.02646
75000 +: $ 0.02481
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 6mA, 600mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PBRP113
Description

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A PBRP113ET,215 is a type of single, pre-biased, bipolar junction transistor (BJT). It is capable of handling high-amperage currents and negligible leakage current, a key factor for its use in applications that require a high degree of precision and accuracy. As with many bipolar transistors, it is also capable of providing feedback, allowing for further control and tuning of the signal.}

A PBRP113ET,215 is similar to a regular bipolar transistor in that it is composed of multiple P- and N-type semiconductor layers, separated by a thin, insulating material. Like other BJTs, a PBRP113ET,215 utilizes two diodes connected back-to-back; this arrangement is known as a PN junction. The major difference lies in its pre-bias; the transistor is pre-bias in one direction, making it highly tolerant of noise and effective at suppressing it. The PBRP113ET,215 can also handle higher frequencies and larger currents than regular bipolar transistors due to its pre- bias, as well as its excellent thermal resistance.

The applications for the PBRP113ET,215 are vast. It can be used in various high-precision power supply circuits, such as those found in computers, phones, and other electronic devices. These circuits must be able to handle stringent noise requirements and high currents, which a PBRP113ET,215 can easily handle. The PBRP113ET,215 has also been used in analog signal amplifiers, where its robust pre-bias allows for very low-noise amplification and improved signal-to-noise ratios.

The working principle of the PBRP113ET,215 is fairly straightforward. The two PN junctions that make up the transistor are biased in one direction. This transistor is mostly used in switching circuits, where the current flowing through it can be either switched on or off. When the current is low, the transistor is in its off-state and the voltage applied to the base is equal to the voltage at the collector. When the voltage applied to the base is increased to a predetermined amount, it forces the current to flow, leading to the switch being flipped on.

The PBRP113ET,215 is an excellent choice for applications that require high precision, low noise, and the ability to withstand high current levels. Its pre-bias design makes it particularly good at rejecting noise and greatly reduces the complexity of the circuit. When coupled with the right external components, the PBRP113ET,215 can be used to power a wide range of applications, from analog amplifiers to power supplies.

The specific data is subject to PDF, and the above content is for reference

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