PC48F4400P0TB0EA Allicdata Electronics
Allicdata Part #:

PC48F4400P0TB0EA-ND

Manufacturer Part#:

PC48F4400P0TB0EA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 64EASYBGA
More Detail: FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52...
DataSheet: PC48F4400P0TB0EA datasheetPC48F4400P0TB0EA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 95ns
Base Part Number: 48F4400P0
Supplier Device Package: 64-EasyBGA (10x13)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 95ns
Series: Axcell™
Clock Frequency: 52MHz
Memory Size: 512Mb (32M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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PC48F4400P0TB0EA Application Field and Working Principle

The PC48F4400P0TB0EA is a type of volatile memory manufactured by Samsung Semiconductor Inc. This memory module is a popular choice for applications in embedded systems, where reliable program and data storage is of the utmost importance. The PC48F4400P0TB0EA contains a chip array architecture with a small unit cell size and bit count/die. This makes it well-suited for use in memory-intensive applications, such as large scale database storage, video encoding/decoding, and military applications.

At the heart of the PC48F4400P0TB0EA is an advanced double data rate (DDR2) memory array, which is composed of memory cells. Each memory cell is consists of two transistors and a storage element. The storage element can store charge, which represents the binary data stored in a cell. When the storage elements are charged, they create a voltage that represents the binary data written in the memory cell. When the memory cell is empty, the voltage is zero.

The PC48F4400P0TB0EA uses a DDR2 architecture, which provides double the data read/write speed of a non-DDR architecture. The device can perform memory operations at speeds up to 400 MHz and has a basic refresh rate of 64 ms. This allows for quick access to stored data and fast data rates.

The PC48F4400P0TB0EA is a highly reliable memory device, with a wide range of industrial and embedded applications. It is also compatible with several programming languages, making it a versatile and useful memory solution for embedded systems. It is particularly useful for mission critical applications, as its high-performance architecture ensures quick data access and reliable storage of data. Additionally, the device offers low power consumption and cost-efficiency.

In conclusion, the PC48F4400P0TB0EA is a versatile and reliable memory device, well-suited for a wide range of industrial and embedded applications. It features a high-performance DDR2 architecture, low power consumption, and excellent reliability. Its compatibility with a wide range of programming languages and cost-efficiency makes it an ideal choice for mission-critical applications.

The specific data is subject to PDF, and the above content is for reference

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