PC50CNP06BAMH

Series:	--
Part Status:	Active
Sensing Method:	Retroreflective, Polarized
Sensing Distance:	236.2" (6m)
Voltage - Supply:	10 V ~ 30 V
Response Time:	1ms
Output Configuration:	NPN/PNP
Connection Method:	Cable
Ingress Protection:	IP67
Cable Length:	78.740" (2000.00mm)
Light Source:	Infrared (660nm)
Adjustment Type:	Adjustable, 1-Turn Potentiometer
Operating Temperature:	-20°C ~ 60°C

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• PC50CNP06BAMH application field and working principle

Introduction

The PC50CNP06BAMH is a phototransistor, also known as an optical sensor, which is used in a variety of industrial and commercial applications. A phototransistor is an electronic device that converts light into an electrical signal. It is made up of a light-sensitive semiconductor material, such as silicon, which is then connected to an electrical circuit. The PC50CNP06BAMH phototransistor is manufactured by Toshiba and is composed of two N-MOSFETs (metal-oxide-semiconductor field-effect transistors) in a single package. It is designed for use in industrial applications.

Application Field

The PC50CNP06BAMH is a versatile device which can be used in a variety of industrial applications, such as controlling, monitoring, and measuring various types of machinery. It can be used for electric door locks, for photoelectric control in manufacturing, as a safety device in manufacturing processes, or as a sensor for controlling robots. It is also suitable for use in the automotive industry, where it can be used for engine control, braking systems, and other automotive systems.

Features

This phototransistor has several features which make it ideal for industrial applications:

• It is highly accurate and reliable, with low power consumption
• It offers wide operating temperatures
• It can be operated in both digital and analog modes
• It has low output impedance
• It has high speed response
• It is able to detect low levels of light

Working Principle

The PC50CNP06BAMH phototransistor operates according to the principle of photoconductivity, which is the ability of a material to change its electrical resistance when exposed to light. When exposed to light, the semiconductor material of the phototransistor absorbs the light, leading to an increase in electrical conduction. This, in turn, leads to a reduction in resistance (it becomes more "conductive"), resulting in an output signal from the phototransistor.

Conclusion

The PC50CNP06BAMH phototransistor is an ideal choice for use in industrial applications as it combines current-operated (digital) and voltage-operated (analog) operations, with low power consumption and high accuracy. It has wide temperature operability and can be used for safety purposes. Its principle of operation is based on the photoconductive effect, which enables it to convert light into an electrical signal.

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