PESD2IVN27-TR

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The PESD2IVN27-TR TVS diode is a cutting-edge semiconductor device designed to protect electronic equipment such as automotive systems, military applications, and communications systems by limiting transients on the sensitive lines. It offers low capacitance and low clamping voltage for fast response time and protection from damaging high-voltage transients. Moreover, it’s equipped with both an internal current trigger and an external trigger mode for additional versatility.

The PESD2IVN27-TR features a wide range of electro-static discharge (ESD), electrical-fast transient (EFT) and surge protection. This diode is made of a special silicon avalanche diode structure specifically designed for high performance in unidirectional single line applications. The device features extended ESD protection up to the AEC-Q101 standard and ±35kV EFT protection, exceeds IEC 61000-4-2, EFT test criteria and enables a more reliable design.

The symmetrical asymmetric ESD pulse characteristic curve of this diode ensures excellent ESD protection level for signal and data lines. With extremely low capacitance, the PESD2IVN27-TR is ideal for high-speed data rate applications. The device also features excellent clamping performances and offers a low clamping voltage of under 7V. Advanced manufacturing processes and testing of the diode further guarantee best-in-class performance.

The working principle of the PESD2IVN27-TR TVS diode is based on the avalanche effect which occurs when a certain electric field is applied. When the ESD voltage is applied to the device, electrons are accelerated by the electric field to a high speed that triggers the avalanche effect and starts a current flow in the opposite direction.

Once the current reaches a certain threshold, the PESD2IVN27-TR begins to respond quickly and conducts the energy away from the protected pins into the diode. Due to its low capacitance, the device ensures fast response times of less than 10ns for ESD and 18.2ns for EFT protection.

The PESD2IVN27-TR is widely used in automotive, industrial, and communication applications for high-speed data protecting from destructive ESD, EFTs, and over-voltage surges. The device has fast response time which helps to protect high-speed data from damage and helps in lessening the impact of ESD and EFT related shutdowns, thereby ensuring greater system reliability.

In conclusion, the PESD2IVN27-TR TVS diode is a unique and effective semiconductor device specifically designed for high-speed data rate applications. It offers increased reliability and protection from destructive ESD, EFTs, and over-voltage surges. Through its low-capacitance, symmetrical asymmetric ESD pulse characteristic curve, and adjustable trigger levels, it helps to ensure faster response times and effective protection for high-speed data lines.

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