PESD3V3U1UL,315 Allicdata Electronics

PESD3V3U1UL,315 Circuit Protection

Allicdata Part #:

1727-4154-2-ND

Manufacturer Part#:

PESD3V3U1UL,315

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Nexperia USA Inc.
Short Description: TVS DIODE 3.3V DFN1006-2
More Detail: N/A
DataSheet: PESD3V3U1UL,315 datasheetPESD3V3U1UL,315 Datasheet/PDF
Quantity: 20000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.05264
30000 +: $ 0.04924
50000 +: $ 0.04414
Stock 20000Can Ship Immediately
$ 0.06
Specifications
Current - Peak Pulse (10/1000µs): --
Base Part Number: PESD*U1U
Supplier Device Package: DFN1006-2
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 2.6pF @ 1MHz
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: --
Series: Automotive, AEC-Q101
Voltage - Clamping (Max) @ Ipp: --
Voltage - Breakdown (Min): 4.5V
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes are an important and powerful device used in electronic circuits for protection. The PESD3V3U1UL,315 device is one such device that offers excellent protection for transorbs and Digital Signal Processor (DSP) applications. This article will discuss the PESD3V3U1UL,315 application field and working principle.

The PESD3V3U1UL,315 is a unidirectional (unipolar) unidirectional breakdown (TVS) diode designed to protect electronic circuits from high voltage transients. It provides superior ESD and EFT protection in extremely low capacitance, making it ideal for transistor, FET, diode and other Electronics applications. The TVS diode is constructed with a Zener diode at the drain end and a P-Channel MOSFET at the source end, allowing it to clamp very quickly and effectively dissipate transient energies.

The PESD3V3U1UL,315 can be used to protect against electro-static discharge (ESD), electro-magnetic interference (EMI), and electro-static protection (EPA). It can be used as a single-channel device or with multiple channels and multiple input/output combinations. The device is designed to absorb very high transient voltage and current spikes with low capacitance. This allows it to provide superior protection for devices in the sensitive input/output (I/O) range of transistor, FET, diode and other electronics applications.

The PESD3V3U1UL,315 works by clamping the transient voltage at the breakdown voltage of the diode. When the voltage reaches this level, the P-Channel MOSFET acts to dissipate the energy. This protects the components in the circuit from being damaged or destroyed due to the excessively high voltage. The device only clamps the voltage when it exceeds the breakdown voltage, allowing a normal operating voltage to pass through when the voltage is below the breakdown voltage.

The breakdown voltage of the PESD3V3U1UL,315 is 3.3V, making it suitable for many different types of applications. It can be used to protect against transients in digital ICs, processors, memory modules, FPGAs and other device types. The device provides superior protection for devices in the sensitive input/output (I/O) range. It also provides EMI/RFI protection for symmetrical and unsymmetrical power supplies.

In summary, the PESD3V3U1UL,315 is a powerful and versatile device that can provide superior protection for transorbs and Digital Signal Processors. It is constructed with a Zener diode at the drain end and a P-Channel MOSFET at the source end. When the voltage exceeds the breakdown voltage, the P-Channel MOSFET acts to dissipate the transient energy, protecting the components in the circuit from being damaged or destroyed. This device is ideal for applications requiring very low capacitance and superior ESD and EFT protection.

The specific data is subject to PDF, and the above content is for reference

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