PN918 Allicdata Electronics
Allicdata Part #:

PN918-ND

Manufacturer Part#:

PN918

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR RF NPN 15V TO-92
More Detail: RF Transistor NPN 15V 50mA 600MHz 350mW Through Ho...
DataSheet: PN918 datasheetPN918 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N918
Description

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PN918 Application Field and Working Principle

PN918 is a two-stage, wide band Aluminum Gallium Arsenide (AlGaAs) High Electron Mobility Transistor (HEMT) in an isolated Delta Pak package. This low power bipolar transistor is suitable for general purpose RF applications. It is designed specifically for wide-band UHF applications due to its broadband and high frequency features. PN918 is mainly used in amplifier circuits and other applications requiring high frequency amplification and voltage gain.

Working Principle

PN918 works in three basic modes, which include common base, common emitter and common collector. The other two modes are feedback Emitter follower and Emitter Follower. Common base mode is the standard mode and is better for linear operation of the transistor as it amplifies input signal with high efficiency. Common emitter mode is the most popular mode and is mainly used for power gain. Common collector mode is mainly used for impedance matching and voltage gain with low noise.

Features and Benefits

PN918 features a wide bandwidth frequency range, low noise figure, a high gain-bandwidth product, and an input gate voltage of 1 to 4 V. Its low power consumption and improved linearity ensure increased system efficiency and performance, while its rugged yet lightweight aluminum Gallium Arsenide construction ensures reliable operation. Some of the most important features of PN918 include:

  • Excellent frequency response
  • Low noise figure
  • High efficiency and linearity
  • Wide range of applications
  • Robust design and lightweight material

PN918 is suitable for a wide range of applications in the various segments of telecommunication, such as wireless base station, repeaters, antennae systems and pagers. It is also an ideal choice for audio frequency applications that require higher output power and voltage gain. Additionally, its superior impedance matching properties make it a good choice for use in amplifiers for low frequency applications.

Conclusion

PN918 is a two-stage wide band AlGaAs HEMT transistor in an isolated Delta Pak package. It is designed primarily for wide-band UHF applications due to its broadband and high frequency features. It features low noise figure and high gain-bandwidth product, and its low power consumption and improved linearity ensure increased system efficiency and performance. PN918 is suitable for a variety of applications in telecommunication, such as wireless base stations, repeaters, antennae systems and pagers, and it is an ideal choice for audio frequency applications that require higher output power and voltage gain.

The specific data is subject to PDF, and the above content is for reference

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