Allicdata Part #: | PNZ331F-ND |
Manufacturer Part#: |
PNZ331F |
Price: | $ 0.00 |
Product Category: | Sensors, Transducers |
Manufacturer: | Panasonic Electronic Components |
Short Description: | PIN PHOTO DIODE 900NM 40DEG TO18 |
More Detail: | Photodiode 900nm 80° TO-206AA, TO-18-3 Metal Can |
DataSheet: | PNZ331F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Wavelength: | 900nm |
Color - Enhanced: | -- |
Spectral Range: | -- |
Diode Type: | PIN |
Responsivity @ nm: | 0.55 A/W @ 800nm |
Response Time: | -- |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Dark (Typ): | 100pA |
Active Area: | 0.739mm² |
Viewing Angle: | 80° |
Operating Temperature: | -25°C ~ 100°C |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
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Optical Sensors - Photodiodes are used in many applications that involve light sensing and detection, offering quick response time and high sensitivity. The PNZ331F photodiode is a special, ultra-compact photodiode specifically designed to provide excellent accuracy and speed in the presence of weak optical signals. It is an ideal solution for applications that require extremely fast response and low noise.
The PNZ331F has a wide range of applications, such as optical data transmission, systems where light intensity is a key operational factor, and biometric systems. It can also be used for laser communications, fiber communication systems, optical navigation systems, autofocus and image sensing systems, and for other systems where quick response and absolute accuracy is required.
The device features an ultra-fast response time of 10 us, a low dark current of 50 pA, a spectral response range of 3 µm to 1100 µm, and a high respone sensitivity of V/lx. By controlling the value of the reverse bias, it is possible to change the responsitivity of the device. A reverse bias of 5V is recommended for the best performance.
The PNZ331F photodiode consists of a highly sensitive silicon photodiode mounted in a compact housing for easy integration into a variety of applications. It works on the principle of light energy conversion into electrical energy. A reverse bias is applied, which energizes the photodiode and causes electrons to flow from the n-region to the p-region, resulting in charge carriers passing through the depletion layer.
When light hits the active surface of the photodiode, the photons ionize the material significantly increasing the number of electrons in the n-region. As the electrons reach the p-region, they create a steady current which is then converted into a voltage by the external circuit. This current varies with the intensity of the light striking the active surface of the photodiode, providing a measure of its brightness.
The PNZ331F photodiode offers a combination of fast response speed, high sensitivity, and low dark current, making it suitable for systems where speed and accuracy is of utmost importance. Its wide range of applications in various fields make it a preferred choice for optical sensing and detection.
The specific data is subject to PDF, and the above content is for reference
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