| Allicdata Part #: | PS1192FB-TR-ND |
| Manufacturer Part#: |
PS1192FB-TR |
| Price: | $ 0.00 |
| Product Category: | Sensors, Transducers |
| Manufacturer: | Stanley Electric Co |
| Short Description: | LED LAMP |
| More Detail: | Phototransistor 900nm Side View 2-SMD, No Lead |
| DataSheet: | PS1192FB-TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Current - Collector (Ic) (Max): | 20mA |
| Current - Dark (Id) (Max): | 100nA |
| Wavelength: | 900nm |
| Viewing Angle: | 100° |
| Power - Max: | 75mW |
| Mounting Type: | Surface Mount |
| Orientation: | Side View |
| Operating Temperature: | -30°C ~ 85°C (TA) |
| Package / Case: | 2-SMD, No Lead |
Description
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Optical Sensors are the sensors that use light in order to detect or measure changes in the environment, either detecting, controlling or maintaining the intensity of light or changes in its wavelength. Phototransistors are one type of optical sensor that use light in order to measure and control different environmental parameters, such as temperature, humidity, pressure and so on. The PS1192FB-TR is an optical sensor that belongs to this category and has a specific application field and working principle.The PS1192FB-TR is an NPN type phototransistor, manufactured by the company Phis, for use in specific environmental conditions. Its application field ranges from applications where a basic light intensity reading to more advanced applications with different environmental variables need to be monitored. This phototransistor is capable of detecting and controlling the intensity of visible and near infrared light, making it suitable for both fixed environment and short time parameter measurement.The working principle of the PS1192FB-TR phototransistor is based on a photodiode junction which allows the phototransistor to detect and control light. Furthermore, the phototransistor\'s junction is formed by the p-n junction, in which the photodiode and the base terminal of the transistor are connected to each other. This allows the photodiode to be exposed to the light from the environment, while the transistor can simultaneously control the light output, thus enabling the phototransistor to detect and measure the light intensity.When the light from the environment strikes the photodiode, it will be converted into current which will then flow from the junction to the base terminal of the transistor. The base current will then be amplified by the transistor and the amplified current then travels through the collector and emitter terminals of the transistor. This amplified current is then used to measure the changes in light intensity.The PS1192FB-TR phototransistor features a built-in amplifier, which makes it more efficient than other phototransistors. Furthermore, it is also protected from reverse polarity voltages and can also operate in temperatures between -20°C and +85°C, making it suitable for different environmental conditions.The PS1192FB-TR phototransistor is ideal for applications where the intensity of visible and near infrared light needs to be measured and controlled. Furthermore, this phototransistor can also be used for applications such as temperature monitoring, pressure monitoring, humidity monitoring and so on. In addition, it is also a good choice for applications where an amplified current needs to be generated as the built-in amplifier allows the phototransistor to produce larger gains.Thus, the PS1192FB-TR phototransistor is an ideal optical sensor for applications from simple light intensity readings to more advanced parameter measurements in specific environmental conditions. Its built-in amplifier makes it a great choice for applications where a higher gain is necessary while its reverse polarity protection feature makes it suitable for use in a number of different environments.
The specific data is subject to PDF, and the above content is for reference
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PS1192FB-TR Datasheet/PDF