PT2559B/L2/H2-F Allicdata Electronics
Allicdata Part #:

1080-1153-ND

Manufacturer Part#:

PT2559B/L2/H2-F

Price: $ 0.06
Product Category:

Sensors, Transducers

Manufacturer: Everlight Electronics Co Ltd
Short Description: PHOTOTRANSISTOR SIDE FACE BK RAD
More Detail: Phototransistor 940nm Side View Radial, 3 Lead, Si...
DataSheet: PT2559B/L2/H2-F datasheetPT2559B/L2/H2-F Datasheet/PDF
Quantity: 1000
2000 +: $ 0.05544
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Current - Dark (Id) (Max): 100nA
Wavelength: 940nm
Viewing Angle: --
Mounting Type: Through Hole
Orientation: Side View
Operating Temperature: -25°C ~ 85°C (TA)
Package / Case: Radial, 3 Lead, Side View
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Optical Sensors - Phototransistors encompass a wide range of technologies and components designed to sense and respond to light. One of these is the PT2559B/L2/H2-F, a device that can provide feedback on the brightness of any given light source. Here, we will explore the PT2559B/L2/H2-F application field and working principle.

The PT2559B/L2/H2-F is an analog, surface-mount phototransistor that can detect both visible and infrared light sources. It is an NPN BJT transistor that contains a photo-collector junction. It is designed especially for infrared sensing in mobile digital camera modules, scanners, and imaging systems, and it is suitable for applications where high speed, high sensitivity, and low power consumption are all of the utmost importance.

The device is housed in an SOT-23 package, which consists of three pins attached to its exterior. The collector pin is connected to the base of the NPN transistor, while the sources of current or voltage are routed to the emitter pin. When the device is exposed to light, it induces current flow between the collector and emitter, thus providing information on the level of light at any given time.

When it comes to applications, the primary field for the PT2559B/L2/H2-F is digital imaging where the device can be used to add brightness control to an image sensor or to detect the brightness of a given scene. It can also be used as an autofocus lens in mobile phones, and has proven to be useful in distance doppler radar applications. In addition, the device can be used to sense ambient light, detect candlelight, or monitor the intensity of LED light sources.

The working principle of the PT2559B/L2/H2-F is quite simple. The device has a photo emitter junction that enables very sensitive detection of light. As previously mentioned, this junction is positioned between the collector and the emitter pins. When exposed to light, the electrons in the device are excited and move from the emitters to the collector, creating a current flow between the pins. This current is proportional to the amount of light present.

The response time of the device is fast, meaning that the current flow will quickly reach its steady-state value. Additionally, the device provides a wide dynamic range, which allows for higher sensitivity when the light source varies drastically with a short period of time. Finally, it offers low power consumption and is capable of operating with as little as 4.5V.

In conclusion, the PT2559B/L2/H2-F is a great choice for phototransistor applications. It is housed in a small SOT-23 package, offers excellent sensitivity and a wide dynamic range, and consumes very low power. It can be used in a variety digital imaging, autofocus, distance doppler radar applications, and ambient light sensing applications. Additionally, its working principle is fairly simple: when exposed to light, electrons in the device excite and move from the emitters to the collector, creating a current flow between the pins.

The specific data is subject to PDF, and the above content is for reference

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